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Moram, M. A., Sadler, T. C., Häberlen, M., Kappers, M. J., Humphreys, C. J. (2010) Dislocation movement in GaN films. Applied Physics Letters, 97 (26). 261907pp. doi:10.1063/1.3532965

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Reference TypeJournal (article/letter/editorial)
TitleDislocation movement in GaN films
JournalApplied Physics Letters
AuthorsMoram, M. A.Author
Sadler, T. C.Author
Häberlen, M.Author
Kappers, M. J.Author
Humphreys, C. J.Author
Year2010 (December 27)Volume97
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.3532965Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8589426Long-form Identifiermindat:1:5:8589426:0
GUID0
Full ReferenceMoram, M. A., Sadler, T. C., Häberlen, M., Kappers, M. J., Humphreys, C. J. (2010) Dislocation movement in GaN films. Applied Physics Letters, 97 (26). 261907pp. doi:10.1063/1.3532965
Plain TextMoram, M. A., Sadler, T. C., Häberlen, M., Kappers, M. J., Humphreys, C. J. (2010) Dislocation movement in GaN films. Applied Physics Letters, 97 (26). 261907pp. doi:10.1063/1.3532965
In(2010, December) Applied Physics Letters Vol. 97 (26) AIP Publishing

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Moram, M. A., Kappers, M. J., Massabuau, F., Oliver, R. A., Humphreys, C. J. (2011) The effects of Si doping on dislocation movement and tensile stress in GaN films. Journal of Applied Physics, 109 (7). 73509pp. doi:10.1063/1.3553841
Häberlen, M., Badcock, T. J., Moram, M. A., Hollander, J. L., Kappers, M. J., Dawson, P., Humphreys, C. J., Oliver, R. A. (2010) Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. Journal of Applied Physics, 108 (3). 33523pp. doi:10.1063/1.3460641
Moram, M A, Johnston, C F, Kappers, M J, Humphreys, C J (2010) Measuring dislocation densities in nonpolara-plane GaN films using atomic force microscopy. Journal of Physics D: Applied Physics, 43. 55303pp. doi:10.1088/0022-3727/43/5/055303
Moram, M. A., Zhang, Y., Kappers, M. J., Barber, Z. H., Humphreys, C. J. (2007) Dislocation reduction in gallium nitride films using scandium nitride interlayers. Applied Physics Letters, 91 (15). 152101pp. doi:10.1063/1.2794009
Moram, M. A., Kappers, M. J., Massabuau, F., Oliver, R. A., Humphreys, C. J. (2011) Response to “Comment on ‘The effects of Si doping on dislocation movement and tensile stress in GaN films’” [J. Appl. Phys. 109, 073509 (2011)]. Journal of Applied Physics, 110 (9). 96102pp. doi:10.1063/1.3656431
Rhode, S. L., Horton, M. K., Fu, W. Y., Sahonta, S.-L., Kappers, M. J., Pennycook, T. J., Humphreys, C. J., Dusane, R. O., Moram, M. A. (2015) Dislocation core structures in Si-doped GaN. Applied Physics Letters, 107 (24). 243104pp. doi:10.1063/1.4937457
Moram, M. A., Kappers, M. J., Humphreys, C. J. (2010) Low dislocation density nonpolar (11-20) GaN films achieved using scandium nitride interlayers. physica status solidi (c), 7 (7). 1778-1780 doi:10.1002/pssc.200983494
Chang, T. Y., Moram, M. A., McAleese, C., Kappers, M. J., Humphreys, C. J. (2010) Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm. Journal of Applied Physics, 108 (12). 123522pp. doi:10.1063/1.3525622
Badcock, T. J., Häberlen, M., Kappers, M. J., Moram, M. A., Dawson, P., Humphreys, C. J., Oliver, R. A. (2010) Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a -plane GaN. physica status solidi (c), 7 (7). 2088-2090 doi:10.1002/pssc.200983573
Johnston, C. F., Moram, M. A., Kappers, M. J., Humphreys, C. J. (2009) Defect reduction in (112¯2) semipolar GaN grown on m-plane sapphire using ScN interlayers. Applied Physics Letters, 94 (16). 161109pp. doi:10.1063/1.3119321
Moram, M. A., Ghedia, C. S., Rao, D. V. S., Barnard, J. S., Zhang, Y., Kappers, M. J., Humphreys, C. J. (2009) On the origin of threading dislocations in GaN films. Journal of Applied Physics, 106 (7). 73513pp. doi:10.1063/1.3225920
 
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