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Suzuki, Hidetoshi, Sasaki, Takuo, Sai, Akihisa, Ohshita, Yoshio, Kamiya, Itaru, Yamaguchi, Masafumi, Takahasi, Masamitu, Fujikawa, Seiji (2010) Real-time observation of anisotropic strain relaxation by three-dimensional reciprocal space mapping during InGaAs/GaAs (001) growth. Applied Physics Letters, 97 (4). 41906pp. doi:10.1063/1.3458695

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Reference TypeJournal (article/letter/editorial)
TitleReal-time observation of anisotropic strain relaxation by three-dimensional reciprocal space mapping during InGaAs/GaAs (001) growth
JournalApplied Physics Letters
AuthorsSuzuki, HidetoshiAuthor
Sasaki, TakuoAuthor
Sai, AkihisaAuthor
Ohshita, YoshioAuthor
Kamiya, ItaruAuthor
Yamaguchi, MasafumiAuthor
Takahasi, MasamituAuthor
Fujikawa, SeijiAuthor
Year2010 (July 26)Volume97
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.3458695Search in ResearchGate
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Mindat Ref. ID8589737Long-form Identifiermindat:1:5:8589737:3
GUID0
Full ReferenceSuzuki, Hidetoshi, Sasaki, Takuo, Sai, Akihisa, Ohshita, Yoshio, Kamiya, Itaru, Yamaguchi, Masafumi, Takahasi, Masamitu, Fujikawa, Seiji (2010) Real-time observation of anisotropic strain relaxation by three-dimensional reciprocal space mapping during InGaAs/GaAs (001) growth. Applied Physics Letters, 97 (4). 41906pp. doi:10.1063/1.3458695
Plain TextSuzuki, Hidetoshi, Sasaki, Takuo, Sai, Akihisa, Ohshita, Yoshio, Kamiya, Itaru, Yamaguchi, Masafumi, Takahasi, Masamitu, Fujikawa, Seiji (2010) Real-time observation of anisotropic strain relaxation by three-dimensional reciprocal space mapping during InGaAs/GaAs (001) growth. Applied Physics Letters, 97 (4). 41906pp. doi:10.1063/1.3458695
In(2010, July) Applied Physics Letters Vol. 97 (4) AIP Publishing

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Sasaki, Takuo, Suzuki, Hidetoshi, Sai, Akihisa, Takahasi, Masamitu, Fujikawa, Seiji, Kamiya, Itaru, Ohshita, Yoshio, Yamaguchi, Masafumi (2011) Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy. Journal of Crystal Growth, 323 (1). 13-16 doi:10.1016/j.jcrysgro.2010.10.005
Sasaki, Takuo, Suzuki, Hidetoshi, Takahasi, Masamitu, Ohshita, Yoshio, Kamiya, Itaru, Yamaguchi, Masafumi (2011) X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs/GaAs(001) epitaxial growth. Journal of Applied Physics, 110 (11). 113502pp. doi:10.1063/1.3664832
Sasaki, Takuo, Suzuki, Hidetoshi, Takahasi, Masamitu, Ohshita, Yoshio, Kamiya, Itaru, Yamaguchi, Masafumi (2013) Erratum: “X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs/GaAs(001) epitaxial growth” [J. Appl. Phys. 110, 113502 (2011)]. Journal of Applied Physics, 113 (19). 199901pp. doi:10.1063/1.4804236
Suzuki, Hidetoshi, Sasaki, Takuo, Takahasi, Masamitu, Ohshita, Yoshio, Yamaguchi, Masafumi (2012) Effects of in Content on Anisotropies in Strain Relaxation Processes of InGaAs/GaAs (001) Measured by Real-Time Three-Dimensional Reciprocal Space Mapping. Materials Science Forum, 725. 89-92 doi:10.4028/www.scientific.net/msf.725.89
Sasaki, Takuo, Shimomura, Kenichi, Suzuki, Hidetoshi, Takahasi, Masamitu, Kamiya, Itaru, Ohshita, Yoshio, Yamaguchi, Masafumi (2012) Observation of In-Plane Asymmetric Strain Relaxation during Crystal Growth and Growth Interruption in InGaAs/GaAs(001) Japanese Journal of Applied Physics, 51 (2) 2 doi:10.1143/jjap.51.02bp01
Sasaki, Takuo, Shimomura, Kenichi, Suzuki, Hidetoshi, Takahasi, Masamitu, Kamiya, Itaru, Ohshita, Yoshio, Yamaguchi, Masafumi (2012) Observation of In-Plane Asymmetric Strain Relaxation during Crystal Growth and Growth Interruption in InGaAs/GaAs(001) Japanese Journal of Applied Physics, 51 (2) 2 doi:10.7567/jjap.51.02bp01
Sasaki, Takuo, Takahasi, Masamitu, Suzuki, Hidetoshi, Ohshita, Yoshio, Yamaguchi, Masafumi (2015) In situ three-dimensional X-ray reciprocal-space mapping of InGaAs multilayer structures grown on GaAs(001) by MBE. Journal of Crystal Growth, 425. 13-15 doi:10.1016/j.jcrysgro.2015.03.044
Suzuki, Hidetoshi, Sasaki, Takuo, Takahasi, Masamitu, Ohshita, Yoshio, Kojima, Nobuaki, Kamiya, Itaru, Fukuyama, Atsuhiko, Ikari, Tetsuo, Yamaguchi, Masafumi (2017) Effect of substrate orientation on strain relaxation mechanisms of InGaAs layer grown on vicinal GaAs substrates measured by in situ X-ray diffraction. Japanese Journal of Applied Physics, 56 (8) 8 doi:10.7567/jjap.56.08ma06
Shimomura, Kenichi, Suzuki, Hidetoshi, Sasaki, Takuo, Takahasi, Masamitu, Ohshita, Yoshio, Kamiya, Itaru (2015) Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction. Journal of Applied Physics, 118 (18). 185303pp. doi:10.1063/1.4935456
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Sasaki, T., Suzuki, H., Sai, A., Takahasi, M., Fujikawa, S., Kamiya, I., Ohshita, Y., Yamaguchi, M. (2014) Erratum to “Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy” [J. Cryst. Growth 323 (2011) 13–16]. Journal of Crystal Growth, 387. 124pp. doi:10.1016/j.jcrysgro.2013.10.010
 
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