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Trinh, H. D., Chang, E. Y., Wu, P. W., Wong, Y. Y., Chang, C. T., Hsieh, Y. F., Yu, C. C., Nguyen, H. Q., Lin, Y. C., Lin, K. L., Hudait, M. K. (2010) The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor. Applied Physics Letters, 97 (4). 42903pp. doi:10.1063/1.3467813

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Reference TypeJournal (article/letter/editorial)
TitleThe influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor
JournalApplied Physics Letters
AuthorsTrinh, H. D.Author
Chang, E. Y.Author
Wu, P. W.Author
Wong, Y. Y.Author
Chang, C. T.Author
Hsieh, Y. F.Author
Yu, C. C.Author
Nguyen, H. Q.Author
Lin, Y. C.Author
Lin, K. L.Author
Hudait, M. K.Author
Year2010 (July 26)Volume97
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.3467813Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8589810Long-form Identifiermindat:1:5:8589810:5
GUID0
Full ReferenceTrinh, H. D., Chang, E. Y., Wu, P. W., Wong, Y. Y., Chang, C. T., Hsieh, Y. F., Yu, C. C., Nguyen, H. Q., Lin, Y. C., Lin, K. L., Hudait, M. K. (2010) The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor. Applied Physics Letters, 97 (4). 42903pp. doi:10.1063/1.3467813
Plain TextTrinh, H. D., Chang, E. Y., Wu, P. W., Wong, Y. Y., Chang, C. T., Hsieh, Y. F., Yu, C. C., Nguyen, H. Q., Lin, Y. C., Lin, K. L., Hudait, M. K. (2010) The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor. Applied Physics Letters, 97 (4). 42903pp. doi:10.1063/1.3467813
In(2010, July) Applied Physics Letters Vol. 97 (4) AIP Publishing

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