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Jancu, J.-M., Gauthron, K., Largeau, L., Patriarche, G., Harmand, J.-C., Voisin, P. (2010) Type II heterostructures formed by zinc-blende inclusions in InP and GaAs wurtzite nanowires. Applied Physics Letters, 97 (4). 41910pp. doi:10.1063/1.3473779

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Reference TypeJournal (article/letter/editorial)
TitleType II heterostructures formed by zinc-blende inclusions in InP and GaAs wurtzite nanowires
JournalApplied Physics Letters
AuthorsJancu, J.-M.Author
Gauthron, K.Author
Largeau, L.Author
Patriarche, G.Author
Harmand, J.-C.Author
Voisin, P.Author
Year2010 (July 26)Volume97
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.3473779Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8589913Long-form Identifiermindat:1:5:8589913:1
GUID0
Full ReferenceJancu, J.-M., Gauthron, K., Largeau, L., Patriarche, G., Harmand, J.-C., Voisin, P. (2010) Type II heterostructures formed by zinc-blende inclusions in InP and GaAs wurtzite nanowires. Applied Physics Letters, 97 (4). 41910pp. doi:10.1063/1.3473779
Plain TextJancu, J.-M., Gauthron, K., Largeau, L., Patriarche, G., Harmand, J.-C., Voisin, P. (2010) Type II heterostructures formed by zinc-blende inclusions in InP and GaAs wurtzite nanowires. Applied Physics Letters, 97 (4). 41910pp. doi:10.1063/1.3473779
In(2010, July) Applied Physics Letters Vol. 97 (4) AIP Publishing

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Jacopin, G., Rigutti, L., Largeau, L., Fortuna, F., Furtmayr, F., Julien, F. H., Eickhoff, M., Tchernycheva, M. (2011) Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires. Journal of Applied Physics, 110 (6). 64313pp. doi:10.1063/1.3638698
Patriarche, G., Largeau, L., Harmand, J.-C., Gollub, D. (2004) Morphology and composition of highly strained InGaAs and InGaAsN layers grown on GaAs substrate. Applied Physics Letters, 84 (2). 203-205 doi:10.1063/1.1639510
Li, L. H., Sallet, V., Patriarche, G., Largeau, L., Bouchoule, S., Travers, L., Harmand, J. C. (2003) Investigations on GaInNAsSb quinary alloy for 1.5 μm laser emission on GaAs. Applied Physics Letters, 83 (7). 1298-1300 doi:10.1063/1.1601671
Glas, Frank, Harmand, Jean-Christophe, Patriarche, Gilles (2007) Why Does Wurtzite Form in Nanowires of III-V Zinc Blende Semiconductors?. Physical Review Letters, 99 (14). doi:10.1103/physrevlett.99.146101
Pal, B., Goto, K., Ikezawa, M., Masumoto, Y., Mohan, P., Motohisa, J., Fukui, T. (2008) Type-II behavior in wurtzite InP/InAs/InP core-multishell nanowires. Applied Physics Letters, 93 (7). 73105pp. doi:10.1063/1.2966343
Naji, K., Saint-Girons, G., Penuelas, J., Patriarche, G., Largeau, L., Dumont, H., Rojo-Romeo, P., Gendry, M. (2013) Influence of catalyst droplet diameter on the growth direction of InP nanowires grown on Si(001) substrate. Applied Physics Letters, 102 (24). 243113pp. doi:10.1063/1.4811782
Saint-Girons, G., Regreny, P., Largeau, L., Patriarche, G., Hollinger, G. (2007) Monolithic integration of InP based heterostructures on silicon using crystalline Gd2O3 buffers. Applied Physics Letters, 91 (24). 241912pp. doi:10.1063/1.2824466
Lucot, D., Jabeen, F., Harmand, J.-C., Patriarche, G., Giraud, R., Faini, G., Mailly, D. (2011) Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires. Applied Physics Letters, 98 (14). 142114pp. doi:10.1063/1.3574026
Cheng, J., Largeau, L., Patriarche, G., Regreny, P., Hollinger, G., Saint-Girons, G. (2009) Twin formation during the growth of InP on SrTiO3. Applied Physics Letters, 94 (23). 231902pp. doi:10.1063/1.3151826
Harmand, J. C., Li, L. H., Patriarche, G., Travers, L. (2004) GaInAs/GaAs quantum-well growth assisted by Sb surfactant: Toward 1.3 μm emission. Applied Physics Letters, 84 (20). 3981-3983 doi:10.1063/1.1751221
Peng, Wang, Jabeen, F., Jusserand, B., Harmand, J. C., Bernard, M. (2012) Conduction band structure in wurtzite GaAs nanowires: A resonant Raman scattering study. Applied Physics Letters, 100 (7). 73102pp. doi:10.1063/1.3684837
 
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