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Khoshakhlagh, A., Jaeckel, F., Hains, C., Rodriguez, J. B., Dawson, L. R., Malloy, K., Krishna, S. (2010) Background carrier concentration in midwave and longwave InAs/GaSb type II superlattices on GaAs substrate. Applied Physics Letters, 97 (5). 51109pp. doi:10.1063/1.3457908

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Reference TypeJournal (article/letter/editorial)
TitleBackground carrier concentration in midwave and longwave InAs/GaSb type II superlattices on GaAs substrate
JournalApplied Physics Letters
AuthorsKhoshakhlagh, A.Author
Jaeckel, F.Author
Hains, C.Author
Rodriguez, J. B.Author
Dawson, L. R.Author
Malloy, K.Author
Krishna, S.Author
Year2010 (August 2)Volume97
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.3457908Search in ResearchGate
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Mindat Ref. ID8589969Long-form Identifiermindat:1:5:8589969:0
GUID0
Full ReferenceKhoshakhlagh, A., Jaeckel, F., Hains, C., Rodriguez, J. B., Dawson, L. R., Malloy, K., Krishna, S. (2010) Background carrier concentration in midwave and longwave InAs/GaSb type II superlattices on GaAs substrate. Applied Physics Letters, 97 (5). 51109pp. doi:10.1063/1.3457908
Plain TextKhoshakhlagh, A., Jaeckel, F., Hains, C., Rodriguez, J. B., Dawson, L. R., Malloy, K., Krishna, S. (2010) Background carrier concentration in midwave and longwave InAs/GaSb type II superlattices on GaAs substrate. Applied Physics Letters, 97 (5). 51109pp. doi:10.1063/1.3457908
In(2010, August) Applied Physics Letters Vol. 97 (5) AIP Publishing

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Rodriguez, J. B., Plis, E., Bishop, G., Sharma, Y. D., Kim, H., Dawson, L. R., Krishna, S. (2007) nBn structure based on InAs∕GaSb type-II strained layer superlattices. Applied Physics Letters, 91 (4). 43514pp. doi:10.1063/1.2760153
Gautam, N., Kim, H. S., Kutty, M. N., Plis, E., Dawson, L. R., Krishna, S. (2010) Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers. Applied Physics Letters, 96 (23). 231107pp. doi:10.1063/1.3446967
Gopal, V., Plis, E., Rodriguez, J.-B., Jones, C. E., Faraone, L., Krishna, S. (2008) Modeling of electrical characteristics of midwave type II InAs∕GaSb strain layer superlattice diodes. Journal of Applied Physics, 104 (12). 124506pp. doi:10.1063/1.3042232
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