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Lin, T.-Y., Lim, K.-M., Andrews, A. M., Strasser, G., Bird, J. P. (2010) Nonspin related giant magnetoresistance ≤600% in hybrid field-effect transistors with ferromagnetic gates. Applied Physics Letters, 97 (6). 63108pp. doi:10.1063/1.3477962

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Reference TypeJournal (article/letter/editorial)
TitleNonspin related giant magnetoresistance ≤600% in hybrid field-effect transistors with ferromagnetic gates
JournalApplied Physics Letters
AuthorsLin, T.-Y.Author
Lim, K.-M.Author
Andrews, A. M.Author
Strasser, G.Author
Bird, J. P.Author
Year2010 (August 9)Volume97
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.3477962Search in ResearchGate
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Mindat Ref. ID8590168Long-form Identifiermindat:1:5:8590168:5
GUID0
Full ReferenceLin, T.-Y., Lim, K.-M., Andrews, A. M., Strasser, G., Bird, J. P. (2010) Nonspin related giant magnetoresistance ≤600% in hybrid field-effect transistors with ferromagnetic gates. Applied Physics Letters, 97 (6). 63108pp. doi:10.1063/1.3477962
Plain TextLin, T.-Y., Lim, K.-M., Andrews, A. M., Strasser, G., Bird, J. P. (2010) Nonspin related giant magnetoresistance ≤600% in hybrid field-effect transistors with ferromagnetic gates. Applied Physics Letters, 97 (6). 63108pp. doi:10.1063/1.3477962
In(2010, August) Applied Physics Letters Vol. 97 (6) AIP Publishing

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Lin, T.-Y., Bae, J.-U., Bohra, G., Lim, K., Reno, J. L., Bird, J. P. (2009) Influence of quantum-interference on the fringing-field magnetoresistance of hybrid ferromagnetic/semiconductor devices. Applied Physics Letters, 95 (14). 143113pp. doi:10.1063/1.3236775
Bae, J.-U., Lin, T.-Y., Yoon, Y., Kim, S. J., Imre, A., Porod, W., Reno, J. L., Bird, J. P. (2008) Large tunneling magnetoresistance in a field-effect transistor with a nanoscale ferromagnetic gate. Applied Physics Letters, 92 (25). 253101pp. doi:10.1063/1.2951901
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