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Ishikawa, F., Fuyuno, S., Higashi, K., Kondow, M., Machida, M., Oji, H., Son, J.-Y., Trampert, A., Umeno, K., Furukawa, Y., Wakahara, A. (2011) Direct observation of N-(group V) bonding defects in dilute nitride semiconductors using hard x-ray photoelectron spectroscopy. Applied Physics Letters, 98 (12). 121915pp. doi:10.1063/1.3573789

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Reference TypeJournal (article/letter/editorial)
TitleDirect observation of N-(group V) bonding defects in dilute nitride semiconductors using hard x-ray photoelectron spectroscopy
JournalApplied Physics Letters
AuthorsIshikawa, F.Author
Fuyuno, S.Author
Higashi, K.Author
Kondow, M.Author
Machida, M.Author
Oji, H.Author
Son, J.-Y.Author
Trampert, A.Author
Umeno, K.Author
Furukawa, Y.Author
Wakahara, A.Author
Year2011 (March 21)Volume98
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.3573789Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8591608Long-form Identifiermindat:1:5:8591608:5
GUID0
Full ReferenceIshikawa, F., Fuyuno, S., Higashi, K., Kondow, M., Machida, M., Oji, H., Son, J.-Y., Trampert, A., Umeno, K., Furukawa, Y., Wakahara, A. (2011) Direct observation of N-(group V) bonding defects in dilute nitride semiconductors using hard x-ray photoelectron spectroscopy. Applied Physics Letters, 98 (12). 121915pp. doi:10.1063/1.3573789
Plain TextIshikawa, F., Fuyuno, S., Higashi, K., Kondow, M., Machida, M., Oji, H., Son, J.-Y., Trampert, A., Umeno, K., Furukawa, Y., Wakahara, A. (2011) Direct observation of N-(group V) bonding defects in dilute nitride semiconductors using hard x-ray photoelectron spectroscopy. Applied Physics Letters, 98 (12). 121915pp. doi:10.1063/1.3573789
In(2011, March) Applied Physics Letters Vol. 98 (12) AIP Publishing

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