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Dahal, R., Li, J., Majety, S., Pantha, B. N., Cao, X. K., Lin, J. Y., Jiang, H. X. (2011) Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material. Applied Physics Letters, 98 (21). 211110pp. doi:10.1063/1.3593958

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material
JournalApplied Physics Letters
AuthorsDahal, R.Author
Li, J.Author
Majety, S.Author
Pantha, B. N.Author
Cao, X. K.Author
Lin, J. Y.Author
Jiang, H. X.Author
Year2011 (May 23)Volume98
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.3593958Search in ResearchGate
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Mindat Ref. ID8593302Long-form Identifiermindat:1:5:8593302:8
GUID0
Full ReferenceDahal, R., Li, J., Majety, S., Pantha, B. N., Cao, X. K., Lin, J. Y., Jiang, H. X. (2011) Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material. Applied Physics Letters, 98 (21). 211110pp. doi:10.1063/1.3593958
Plain TextDahal, R., Li, J., Majety, S., Pantha, B. N., Cao, X. K., Lin, J. Y., Jiang, H. X. (2011) Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material. Applied Physics Letters, 98 (21). 211110pp. doi:10.1063/1.3593958
In(2011, May) Applied Physics Letters Vol. 98 (21) AIP Publishing

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Majety, S., Li, J., Cao, X. K., Dahal, R., Pantha, B. N., Lin, J. Y., Jiang, H. X. (2012) Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics. Applied Physics Letters, 100 (6). 61121pp. doi:10.1063/1.3682523
Majety, S., Cao, X. K., Li, J., Dahal, R., Lin, J. Y., Jiang, H. X. (2012) Band-edge transitions in hexagonal boron nitride epilayers. Applied Physics Letters, 101 (5). 51110pp. doi:10.1063/1.4742194
Li, J., Majety, S., Dahal, R., Zhao, W. P., Lin, J. Y., Jiang, H. X. (2012) Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers. Applied Physics Letters, 101 (17). 171112pp. doi:10.1063/1.4764533
Majety, S., Li, J., Zhao, W. P., Huang, B., Wei, S. H., Lin, J. Y., Jiang, H. X. (2013) Hexagonal boron nitride and 6H-SiC heterostructures. Applied Physics Letters, 102 (21). 213505pp. doi:10.1063/1.4808365
Pantha, B. N., Dahal, R., Li, J., Lin, J. Y., Jiang, H. X., Pomrenke, G. (2008) Thermoelectric properties of InxGa1−xN alloys. Applied Physics Letters, 92 (4). 42112pp. doi:10.1063/1.2839309
Li, J., Cao, X. K., Hoffman, T. B., Edgar, J. H., Lin, J. Y., Jiang, H. X. (2016) Nature of exciton transitions in hexagonal boron nitride. Applied Physics Letters, 108 (12). 122101pp. doi:10.1063/1.4944696
Dahal, R., Pantha, B. N., Li, J., Lin, J. Y., Jiang, H. X. (2014) Realizing InGaN monolithic solar-photoelectrochemical cells for artificial photosynthesis. Applied Physics Letters, 104 (14). 143901pp. doi:10.1063/1.4871105
Cao, X. K., Clubine, B., Edgar, J. H., Lin, J. Y., Jiang, H. X. (2013) Two-dimensional excitons in three-dimensional hexagonal boron nitride. Applied Physics Letters, 103 (19). 191106pp. doi:10.1063/1.4829026
Li, J., Fan, Z. Y., Dahal, R., Nakarmi, M. L, Lin, J. Y., Jiang, H. X. (2006) 200nm deep ultraviolet photodetectors based on AlN. Applied Physics Letters, 89 (21). 213510pp. doi:10.1063/1.2397021
Du, X. Z., Li, J., Lin, J. Y., Jiang, H. X. (2015) The origin of deep-level impurity transitions in hexagonal boron nitride. Applied Physics Letters, 106 (2). 21110pp. doi:10.1063/1.4905908
Feng, I. W., Cao, X. K., Li, J., Lin, J. Y., Jiang, H. X., Sawaki, N., Honda, Y., Tanikawa, T., Zavada, J. M. (2011) Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates. Applied Physics Letters, 98 (8). 81102pp. doi:10.1063/1.3556678
 
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