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Li, Lin, Prucnal, S., Yao, S. D., Potzger, K., Anwand, W., Wagner, A., Zhou, Shengqiang (2011) Rise and fall of defect induced ferromagnetism in SiC single crystals. Applied Physics Letters, 98 (22). 222508pp. doi:10.1063/1.3597629

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Reference TypeJournal (article/letter/editorial)
TitleRise and fall of defect induced ferromagnetism in SiC single crystals
JournalApplied Physics Letters
AuthorsLi, LinAuthor
Prucnal, S.Author
Yao, S. D.Author
Potzger, K.Author
Anwand, W.Author
Wagner, A.Author
Zhou, ShengqiangAuthor
Year2011 (May 30)Volume98
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.3597629Search in ResearchGate
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Mindat Ref. ID8593489Long-form Identifiermindat:1:5:8593489:6
GUID0
Full ReferenceLi, Lin, Prucnal, S., Yao, S. D., Potzger, K., Anwand, W., Wagner, A., Zhou, Shengqiang (2011) Rise and fall of defect induced ferromagnetism in SiC single crystals. Applied Physics Letters, 98 (22). 222508pp. doi:10.1063/1.3597629
Plain TextLi, Lin, Prucnal, S., Yao, S. D., Potzger, K., Anwand, W., Wagner, A., Zhou, Shengqiang (2011) Rise and fall of defect induced ferromagnetism in SiC single crystals. Applied Physics Letters, 98 (22). 222508pp. doi:10.1063/1.3597629
In(2011, May) Applied Physics Letters Vol. 98 (22) AIP Publishing

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