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Marona, L., Perlin, P., Czernecki, R., Leszczyński, M., Boćkowski, M., Jakiela, R., Suski, T., Najda, S. P. (2011) Secondary ions mass spectroscopy measurements of dopant impurities in highly stressed InGaN laser diodes. Applied Physics Letters, 98 (24). 241115pp. doi:10.1063/1.3600338

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Reference TypeJournal (article/letter/editorial)
TitleSecondary ions mass spectroscopy measurements of dopant impurities in highly stressed InGaN laser diodes
JournalApplied Physics Letters
AuthorsMarona, L.Author
Perlin, P.Author
Czernecki, R.Author
Leszczyński, M.Author
Boćkowski, M.Author
Jakiela, R.Author
Suski, T.Author
Najda, S. P.Author
Year2011 (June 13)Volume98
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.3600338Search in ResearchGate
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Mindat Ref. ID8593839Long-form Identifiermindat:1:5:8593839:7
GUID0
Full ReferenceMarona, L., Perlin, P., Czernecki, R., Leszczyński, M., Boćkowski, M., Jakiela, R., Suski, T., Najda, S. P. (2011) Secondary ions mass spectroscopy measurements of dopant impurities in highly stressed InGaN laser diodes. Applied Physics Letters, 98 (24). 241115pp. doi:10.1063/1.3600338
Plain TextMarona, L., Perlin, P., Czernecki, R., Leszczyński, M., Boćkowski, M., Jakiela, R., Suski, T., Najda, S. P. (2011) Secondary ions mass spectroscopy measurements of dopant impurities in highly stressed InGaN laser diodes. Applied Physics Letters, 98 (24). 241115pp. doi:10.1063/1.3600338
In(2011, June) Applied Physics Letters Vol. 98 (24) AIP Publishing

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