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Zhang, L., Wei, X. C., Liu, N. X., Lu, H. X., Zeng, J. P., Wang, J. X., Zeng, Y. P., Li, J. M. (2011) Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition. Applied Physics Letters, 98 (24). 241111pp. doi:10.1063/1.3601469

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Reference TypeJournal (article/letter/editorial)
TitleImprovement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition
JournalApplied Physics Letters
AuthorsZhang, L.Author
Wei, X. C.Author
Liu, N. X.Author
Lu, H. X.Author
Zeng, J. P.Author
Wang, J. X.Author
Zeng, Y. P.Author
Li, J. M.Author
Year2011 (June 13)Volume98
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.3601469Search in ResearchGate
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Mindat Ref. ID8593887Long-form Identifiermindat:1:5:8593887:4
GUID0
Full ReferenceZhang, L., Wei, X. C., Liu, N. X., Lu, H. X., Zeng, J. P., Wang, J. X., Zeng, Y. P., Li, J. M. (2011) Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition. Applied Physics Letters, 98 (24). 241111pp. doi:10.1063/1.3601469
Plain TextZhang, L., Wei, X. C., Liu, N. X., Lu, H. X., Zeng, J. P., Wang, J. X., Zeng, Y. P., Li, J. M. (2011) Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition. Applied Physics Letters, 98 (24). 241111pp. doi:10.1063/1.3601469
In(2011, June) Applied Physics Letters Vol. 98 (24) AIP Publishing

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