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Huang, X. D., Lai, P. T., Liu, L., Xu, J. P. (2011) Nitrided SrTiO3 as charge-trapping layer for nonvolatile memory applications. Applied Physics Letters, 98 (24). 242905pp. doi:10.1063/1.3601473

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Reference TypeJournal (article/letter/editorial)
TitleNitrided SrTiO3 as charge-trapping layer for nonvolatile memory applications
JournalApplied Physics Letters
AuthorsHuang, X. D.Author
Lai, P. T.Author
Liu, L.Author
Xu, J. P.Author
Year2011 (June 13)Volume98
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.3601473Search in ResearchGate
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Mindat Ref. ID8593890Long-form Identifiermindat:1:5:8593890:8
GUID0
Full ReferenceHuang, X. D., Lai, P. T., Liu, L., Xu, J. P. (2011) Nitrided SrTiO3 as charge-trapping layer for nonvolatile memory applications. Applied Physics Letters, 98 (24). 242905pp. doi:10.1063/1.3601473
Plain TextHuang, X. D., Lai, P. T., Liu, L., Xu, J. P. (2011) Nitrided SrTiO3 as charge-trapping layer for nonvolatile memory applications. Applied Physics Letters, 98 (24). 242905pp. doi:10.1063/1.3601473
In(2011, June) Applied Physics Letters Vol. 98 (24) AIP Publishing

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