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Illiberi, A., Kudlacek, P., Smets, A. H. M., Creatore, M., van de Sanden, M. C. M. (2011) Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces. Applied Physics Letters, 98 (24). 242115pp. doi:10.1063/1.3601485

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Reference TypeJournal (article/letter/editorial)
TitleEffect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces
JournalApplied Physics Letters
AuthorsIlliberi, A.Author
Kudlacek, P.Author
Smets, A. H. M.Author
Creatore, M.Author
van de Sanden, M. C. M.Author
Year2011 (June 13)Volume98
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.3601485Search in ResearchGate
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Mindat Ref. ID8593896Long-form Identifiermindat:1:5:8593896:2
GUID0
Full ReferenceIlliberi, A., Kudlacek, P., Smets, A. H. M., Creatore, M., van de Sanden, M. C. M. (2011) Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces. Applied Physics Letters, 98 (24). 242115pp. doi:10.1063/1.3601485
Plain TextIlliberi, A., Kudlacek, P., Smets, A. H. M., Creatore, M., van de Sanden, M. C. M. (2011) Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces. Applied Physics Letters, 98 (24). 242115pp. doi:10.1063/1.3601485
In(2011, June) Applied Physics Letters Vol. 98 (24) AIP Publishing

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Wank, M. A., van Swaaij, R. A. C. M. M., Kudlacek, P., van de Sanden, M. C. M., Zeman, M. (2010) Hydrogenated amorphous silicon deposited under accurately controlled ion bombardment using pulse-shaped substrate biasing. Journal of Applied Physics, 108 (10). 103304pp. doi:10.1063/1.3505794
Dingemans, G., Mandoc, M. M., Bordihn, S., van de Sanden, M. C. M., Kessels, W. M. M. (2011) Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks. Applied Physics Letters, 98 (22). 222102pp. doi:10.1063/1.3595940
Smets, A. H. M., Kessels, W. M. M., van de Sanden, M. C. M. (2007) The effect of ion-surface and ion-bulk interactions during hydrogenated amorphous silicon deposition. Journal of Applied Physics, 102 (7). 73523pp. doi:10.1063/1.2786873
Kudlacek, P., Rumphorst, R. F., van de Sanden, M. C. M. (2009) Accurate control of ion bombardment in remote plasmas using pulse-shaped biasing. Journal of Applied Physics, 106 (7). 73303pp. doi:10.1063/1.3225690
Terlinden, N. M., Dingemans, G., van de Sanden, M. C. M, Kessels, W. M. M. (2010) Role of field-effect on c-Si surface passivation by ultrathin (2–20 nm) atomic layer deposited Al2O3. Applied Physics Letters, 96 (11). 112101pp. doi:10.1063/1.3334729
Smets, A. H. M., Kessels, W. M. M., van de Sanden, M. C. M. (2003) Temperature dependence of the surface roughness evolution during hydrogenated amorphous silicon film growth. Applied Physics Letters, 82 (6). 865-867 doi:10.1063/1.1543237
Smets, A. H. M., Kessels, W. M. M., van de Sanden, M. C. M. (2005) Surface-diffusion-controlled incorporation of nanosized voids during hydrogenated amorphous silicon film growth. Applied Physics Letters, 86 (4). 41909pp. doi:10.1063/1.1853508
Aarts, I. M. P., Pipino, A. C. R., van de Sanden, M. C. M., Kessels, W. M. M. (2007) Absolute in situ measurement of surface dangling bonds during a-Si:H growth. Applied Physics Letters, 90 (16). 161918pp. doi:10.1063/1.2727561
Profijt, H. B., Kudlacek, P., van de Sanden, M. C. M., Kessels, W. M. M. (2011) Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides. Journal of the Electrochemical Society, 158. doi:10.1149/1.3552663
Gielis, J. J. H., van den Oever, P. J., van de Sanden, M. C. M., Kessels, W. M. M. (2007) a-Si:Hβˆ•c-Si heterointerface formation and epitaxial growth studied by real time optical probes. Applied Physics Letters, 90 (20). 202108pp. doi:10.1063/1.2740474
Smets, A. H. M., Kessels, W. M. M., van de Sanden, M. C. M. (2003) Vacancies and voids in hydrogenated amorphous silicon. Applied Physics Letters, 82 (10). 1547-1549 doi:10.1063/1.1559657
 
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