Motayed, Abhishek, Krylyuk, Sergiy, Davydov, Albert V. (2011) Characterization of deep-levels in silicon nanowires by low-frequency noise spectroscopy. Applied Physics Letters, 99 (11). 113107pp. doi:10.1063/1.3637049
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Characterization of deep-levels in silicon nanowires by low-frequency noise spectroscopy | ||
Journal | Applied Physics Letters | ||
Authors | Motayed, Abhishek | Author | |
Krylyuk, Sergiy | Author | ||
Davydov, Albert V. | Author | ||
Year | 2011 (September 12) | Volume | 99 |
Issue | 11 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.3637049Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8595791 | Long-form Identifier | mindat:1:5:8595791:2 |
GUID | 0 | ||
Full Reference | Motayed, Abhishek, Krylyuk, Sergiy, Davydov, Albert V. (2011) Characterization of deep-levels in silicon nanowires by low-frequency noise spectroscopy. Applied Physics Letters, 99 (11). 113107pp. doi:10.1063/1.3637049 | ||
Plain Text | Motayed, Abhishek, Krylyuk, Sergiy, Davydov, Albert V. (2011) Characterization of deep-levels in silicon nanowires by low-frequency noise spectroscopy. Applied Physics Letters, 99 (11). 113107pp. doi:10.1063/1.3637049 | ||
In | (2011, September) Applied Physics Letters Vol. 99 (11) AIP Publishing |
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