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Hsu, Chao-Wei, Chen, Yung-Feng, Su, Yan-Kuin (2011) Nano epitaxial growth of GaAs on Si (001). Applied Physics Letters, 99 (13). 133115pp. doi:10.1063/1.3640226

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Reference TypeJournal (article/letter/editorial)
TitleNano epitaxial growth of GaAs on Si (001)
JournalApplied Physics Letters
AuthorsHsu, Chao-WeiAuthor
Chen, Yung-FengAuthor
Su, Yan-KuinAuthor
Year2011 (September 26)Volume99
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.3640226Search in ResearchGate
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Mindat Ref. ID8596127Long-form Identifiermindat:1:5:8596127:0
GUID0
Full ReferenceHsu, Chao-Wei, Chen, Yung-Feng, Su, Yan-Kuin (2011) Nano epitaxial growth of GaAs on Si (001). Applied Physics Letters, 99 (13). 133115pp. doi:10.1063/1.3640226
Plain TextHsu, Chao-Wei, Chen, Yung-Feng, Su, Yan-Kuin (2011) Nano epitaxial growth of GaAs on Si (001). Applied Physics Letters, 99 (13). 133115pp. doi:10.1063/1.3640226
In(2011, September) Applied Physics Letters Vol. 99 (13) AIP Publishing

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