Takamizawa, H., Shimizu, Y., Inoue, K., Toyama, T., Okada, N., Kato, M., Uchida, H., Yano, F., Nishida, A., Mogami, T., Nagai, Y. (2011) Origin of characteristic variability in metal-oxide-semiconductor field-effect transistors revealed by three-dimensional atom imaging. Applied Physics Letters, 99 (13). 133502pp. doi:10.1063/1.3644960
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Origin of characteristic variability in metal-oxide-semiconductor field-effect transistors revealed by three-dimensional atom imaging | ||
Journal | Applied Physics Letters | ||
Authors | Takamizawa, H. | Author | |
Shimizu, Y. | Author | ||
Inoue, K. | Author | ||
Toyama, T. | Author | ||
Okada, N. | Author | ||
Kato, M. | Author | ||
Uchida, H. | Author | ||
Yano, F. | Author | ||
Nishida, A. | Author | ||
Mogami, T. | Author | ||
Nagai, Y. | Author | ||
Year | 2011 (September 26) | Volume | 99 |
Issue | 13 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.3644960Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8596231 | Long-form Identifier | mindat:1:5:8596231:2 |
GUID | 0 | ||
Full Reference | Takamizawa, H., Shimizu, Y., Inoue, K., Toyama, T., Okada, N., Kato, M., Uchida, H., Yano, F., Nishida, A., Mogami, T., Nagai, Y. (2011) Origin of characteristic variability in metal-oxide-semiconductor field-effect transistors revealed by three-dimensional atom imaging. Applied Physics Letters, 99 (13). 133502pp. doi:10.1063/1.3644960 | ||
Plain Text | Takamizawa, H., Shimizu, Y., Inoue, K., Toyama, T., Okada, N., Kato, M., Uchida, H., Yano, F., Nishida, A., Mogami, T., Nagai, Y. (2011) Origin of characteristic variability in metal-oxide-semiconductor field-effect transistors revealed by three-dimensional atom imaging. Applied Physics Letters, 99 (13). 133502pp. doi:10.1063/1.3644960 | ||
In | (2011, September) Applied Physics Letters Vol. 99 (13) AIP Publishing |
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