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Esposto, Michele, Krishnamoorthy, Sriram, Nath, Digbijoy N., Bajaj, Sanyam, Hung, Ting-Hsiang, Rajan, Siddharth (2011) Electrical properties of atomic layer deposited aluminum oxide on gallium nitride. Applied Physics Letters, 99 (13). 133503pp. doi:10.1063/1.3645616

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Reference TypeJournal (article/letter/editorial)
TitleElectrical properties of atomic layer deposited aluminum oxide on gallium nitride
JournalApplied Physics Letters
AuthorsEsposto, MicheleAuthor
Krishnamoorthy, SriramAuthor
Nath, Digbijoy N.Author
Bajaj, SanyamAuthor
Hung, Ting-HsiangAuthor
Rajan, SiddharthAuthor
Year2011 (September 26)Volume99
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.3645616Search in ResearchGate
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Mindat Ref. ID8596261Long-form Identifiermindat:1:5:8596261:3
GUID0
Full ReferenceEsposto, Michele, Krishnamoorthy, Sriram, Nath, Digbijoy N., Bajaj, Sanyam, Hung, Ting-Hsiang, Rajan, Siddharth (2011) Electrical properties of atomic layer deposited aluminum oxide on gallium nitride. Applied Physics Letters, 99 (13). 133503pp. doi:10.1063/1.3645616
Plain TextEsposto, Michele, Krishnamoorthy, Sriram, Nath, Digbijoy N., Bajaj, Sanyam, Hung, Ting-Hsiang, Rajan, Siddharth (2011) Electrical properties of atomic layer deposited aluminum oxide on gallium nitride. Applied Physics Letters, 99 (13). 133503pp. doi:10.1063/1.3645616
In(2011, September) Applied Physics Letters Vol. 99 (13) AIP Publishing

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