Fukuda, Yukio, Okamoto, Hiroshi, Iwasaki, Takuro, Otani, Yohei, Ono, Toshiro (2011) Surface passivation of p-type Ge substrate with high-quality GeNx layer formed by electron-cyclotron-resonance plasma nitridation at low temperature. Applied Physics Letters, 99 (13). 132907pp. doi:10.1063/1.3647621
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Surface passivation of p-type Ge substrate with high-quality GeNx layer formed by electron-cyclotron-resonance plasma nitridation at low temperature | ||
Journal | Applied Physics Letters | ||
Authors | Fukuda, Yukio | Author | |
Okamoto, Hiroshi | Author | ||
Iwasaki, Takuro | Author | ||
Otani, Yohei | Author | ||
Ono, Toshiro | Author | ||
Year | 2011 (September 26) | Volume | 99 |
Issue | 13 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.3647621Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8596279 | Long-form Identifier | mindat:1:5:8596279:2 |
GUID | 0 | ||
Full Reference | Fukuda, Yukio, Okamoto, Hiroshi, Iwasaki, Takuro, Otani, Yohei, Ono, Toshiro (2011) Surface passivation of p-type Ge substrate with high-quality GeNx layer formed by electron-cyclotron-resonance plasma nitridation at low temperature. Applied Physics Letters, 99 (13). 132907pp. doi:10.1063/1.3647621 | ||
Plain Text | Fukuda, Yukio, Okamoto, Hiroshi, Iwasaki, Takuro, Otani, Yohei, Ono, Toshiro (2011) Surface passivation of p-type Ge substrate with high-quality GeNx layer formed by electron-cyclotron-resonance plasma nitridation at low temperature. Applied Physics Letters, 99 (13). 132907pp. doi:10.1063/1.3647621 | ||
In | (2011, September) Applied Physics Letters Vol. 99 (13) AIP Publishing |
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