Kim, Byung-Hyun, Ariesto Pamungkas, Mauludi, Park, Mina, Kim, Gyubong, Lee, Kwang-Ryeol, Chung, Yong-Chae (2011) Stress evolution during the oxidation of silicon nanowires in the sub-10 nm diameter regime. Applied Physics Letters, 99 (14). 143115pp. doi:10.1063/1.3643038
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Stress evolution during the oxidation of silicon nanowires in the sub-10 nm diameter regime | ||
Journal | Applied Physics Letters | ||
Authors | Kim, Byung-Hyun | Author | |
Ariesto Pamungkas, Mauludi | Author | ||
Park, Mina | Author | ||
Kim, Gyubong | Author | ||
Lee, Kwang-Ryeol | Author | ||
Chung, Yong-Chae | Author | ||
Year | 2011 (October 3) | Volume | 99 |
Issue | 14 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.3643038Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8596295 | Long-form Identifier | mindat:1:5:8596295:0 |
GUID | 0 | ||
Full Reference | Kim, Byung-Hyun, Ariesto Pamungkas, Mauludi, Park, Mina, Kim, Gyubong, Lee, Kwang-Ryeol, Chung, Yong-Chae (2011) Stress evolution during the oxidation of silicon nanowires in the sub-10 nm diameter regime. Applied Physics Letters, 99 (14). 143115pp. doi:10.1063/1.3643038 | ||
Plain Text | Kim, Byung-Hyun, Ariesto Pamungkas, Mauludi, Park, Mina, Kim, Gyubong, Lee, Kwang-Ryeol, Chung, Yong-Chae (2011) Stress evolution during the oxidation of silicon nanowires in the sub-10 nm diameter regime. Applied Physics Letters, 99 (14). 143115pp. doi:10.1063/1.3643038 | ||
In | (2011, October) Applied Physics Letters Vol. 99 (14) AIP Publishing |
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