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Kim, Byung-Hyun, Ariesto Pamungkas, Mauludi, Park, Mina, Kim, Gyubong, Lee, Kwang-Ryeol, Chung, Yong-Chae (2011) Stress evolution during the oxidation of silicon nanowires in the sub-10 nm diameter regime. Applied Physics Letters, 99 (14). 143115pp. doi:10.1063/1.3643038

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Reference TypeJournal (article/letter/editorial)
TitleStress evolution during the oxidation of silicon nanowires in the sub-10 nm diameter regime
JournalApplied Physics Letters
AuthorsKim, Byung-HyunAuthor
Ariesto Pamungkas, MauludiAuthor
Park, MinaAuthor
Kim, GyubongAuthor
Lee, Kwang-RyeolAuthor
Chung, Yong-ChaeAuthor
Year2011 (October 3)Volume99
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.3643038Search in ResearchGate
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Mindat Ref. ID8596295Long-form Identifiermindat:1:5:8596295:0
GUID0
Full ReferenceKim, Byung-Hyun, Ariesto Pamungkas, Mauludi, Park, Mina, Kim, Gyubong, Lee, Kwang-Ryeol, Chung, Yong-Chae (2011) Stress evolution during the oxidation of silicon nanowires in the sub-10 nm diameter regime. Applied Physics Letters, 99 (14). 143115pp. doi:10.1063/1.3643038
Plain TextKim, Byung-Hyun, Ariesto Pamungkas, Mauludi, Park, Mina, Kim, Gyubong, Lee, Kwang-Ryeol, Chung, Yong-Chae (2011) Stress evolution during the oxidation of silicon nanowires in the sub-10 nm diameter regime. Applied Physics Letters, 99 (14). 143115pp. doi:10.1063/1.3643038
In(2011, October) Applied Physics Letters Vol. 99 (14) AIP Publishing


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