Watch the Dallas Symposium LIVE, and fundraiser auction
Ticket proceeds support mindat.org! - click here...
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Shin, Mincheol (2011) Intrinsic reduction of ballistic hole current due to quantum mechanical coupling of heavy and light holes in p-type Si nanowire field effect transistors. Applied Physics Letters, 99 (14). 143503pp. doi:10.1063/1.3644959

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleIntrinsic reduction of ballistic hole current due to quantum mechanical coupling of heavy and light holes in p-type Si nanowire field effect transistors
JournalApplied Physics Letters
AuthorsShin, MincheolAuthor
Year2011 (October 3)Volume99
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.3644959Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8596332Long-form Identifiermindat:1:5:8596332:0
GUID0
Full ReferenceShin, Mincheol (2011) Intrinsic reduction of ballistic hole current due to quantum mechanical coupling of heavy and light holes in p-type Si nanowire field effect transistors. Applied Physics Letters, 99 (14). 143503pp. doi:10.1063/1.3644959
Plain TextShin, Mincheol (2011) Intrinsic reduction of ballistic hole current due to quantum mechanical coupling of heavy and light holes in p-type Si nanowire field effect transistors. Applied Physics Letters, 99 (14). 143503pp. doi:10.1063/1.3644959
In(2011, October) Applied Physics Letters Vol. 99 (14) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Shin, Mincheol (2010) Effect of channel orientation in p-type nanowire Schottky barrier metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 97 (9). 92108pp. doi:10.1063/1.3485062
Shin, Mincheol (2007) Efficient simulation of silicon nanowire field effect transistors and their scaling behavior. Journal of Applied Physics, 101 (2). 24510pp. doi:10.1063/1.2430786
Shin, Mincheol, Jeong, Woo Jin, Lee, Jaehyun (2016) Density functional theory based simulations of silicon nanowire field effect transistors. Journal of Applied Physics, 119 (15). 154505pp. doi:10.1063/1.4946754
Jung, Hyo-Eun, Shin, Mincheol (2015) Surface roughness scattering effects on the ballisticity of Schottky barrier nanowire field effect transistors. Journal of Applied Physics, 118 (19). 195703pp. doi:10.1063/1.4935821
Luisier, Mathieu (2011) Phonon-limited and effective low-field mobility in n- and p-type [100]-, [110]-, and [111]-oriented Si nanowire transistors. Applied Physics Letters, 98 (3). 32111pp. doi:10.1063/1.3540689
Kothiyal, G. P., Hong, S., Debbar, N., Bhattacharya, P. K., Singh, J. (1987) Enhancement in excitonic absorption due to overlap in heavy‐hole and light‐hole excitons in GaAs/InAlGaAs quantum well structures. Applied Physics Letters, 51 (14). 1091-1093 doi:10.1063/1.98750
Shin, Mincheol, Jang, Moongyu, Lee, Seongjae (2006) Quantum simulation of resonant tunneling in nanoscale tunnel transistors. Journal of Applied Physics, 99 (6). 66109pp. doi:10.1063/1.2183348
Vandenberghe, William G., Sorée, Bart, Magnus, Wim, Groeseneken, Guido, Fischetti, Massimo V. (2011) Impact of field-induced quantum confinement in tunneling field-effect devices. Applied Physics Letters, 98 (14). 143503pp. doi:10.1063/1.3573812
Wang, W., Tsuchiya, H., Ogawa, M. (2009) Enhancement of ballistic efficiency due to source to channel heterojunction barrier in Si metal oxide semiconductor field effect transistors. Journal of Applied Physics, 106 (2). 24515pp. doi:10.1063/1.3186028
Karmalkar, Shreepad, Maheswaran, K. R. K., Gurugubelli, Vijayakumar (2011) Ambient field effects on the current-voltage characteristics of nanowire field effect transistors. Applied Physics Letters, 98 (6). 63508pp. doi:10.1063/1.3555426
Lee, Ju-Wan, Park, Chan Hyeong, Shin, Hyungcheol, Park, Byung-Gook, Lee, Jong-Ho (2011) Accurate extraction of ΔI/I due to random telegraph noise in gate edge current of high-k n-type metal-oxide-semiconductor field-effect transistors under accumulation mode. Applied Physics Letters, 98 (2). 23505pp. doi:10.1063/1.3543901
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 22, 2025 01:20:17
Go to top of page