Sakr, S., Warde, E., Tchernycheva, M., Rigutti, L., Isac, N., Julien, F. H. (2011) Origin of the electrical instabilities in GaN/AlGaN double-barrier structure. Applied Physics Letters, 99 (14). 142103pp. doi:10.1063/1.3645011
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Origin of the electrical instabilities in GaN/AlGaN double-barrier structure | ||
Journal | Applied Physics Letters | ||
Authors | Sakr, S. | Author | |
Warde, E. | Author | ||
Tchernycheva, M. | Author | ||
Rigutti, L. | Author | ||
Isac, N. | Author | ||
Julien, F. H. | Author | ||
Year | 2011 (October 3) | Volume | 99 |
Issue | 14 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.3645011Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8596339 | Long-form Identifier | mindat:1:5:8596339:3 |
GUID | 0 | ||
Full Reference | Sakr, S., Warde, E., Tchernycheva, M., Rigutti, L., Isac, N., Julien, F. H. (2011) Origin of the electrical instabilities in GaN/AlGaN double-barrier structure. Applied Physics Letters, 99 (14). 142103pp. doi:10.1063/1.3645011 | ||
Plain Text | Sakr, S., Warde, E., Tchernycheva, M., Rigutti, L., Isac, N., Julien, F. H. (2011) Origin of the electrical instabilities in GaN/AlGaN double-barrier structure. Applied Physics Letters, 99 (14). 142103pp. doi:10.1063/1.3645011 | ||
In | (2011, October) Applied Physics Letters Vol. 99 (14) AIP Publishing |
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