Reference Type | Journal (article/letter/editorial) |
---|
Title | Nanosecond-range imprint and retention characterized from polarization-voltage hysteresis loops in insulating or leaky ferroelectric thin films |
---|
Journal | Applied Physics Letters |
---|
Authors | Jiang, A. Q. | Author |
---|
Liu, X. B. | Author |
Zhang, Q. | Author |
Year | 2011 (October 3) | Volume | 99 |
---|
Issue | 14 |
---|
Publisher | AIP Publishing |
---|
DOI | doi:10.1063/1.3647577Search in ResearchGate |
---|
| Generate Citation Formats |
Mindat Ref. ID | 8596454 | Long-form Identifier | mindat:1:5:8596454:1 |
---|
|
GUID | 0 |
---|
Full Reference | Jiang, A. Q., Liu, X. B., Zhang, Q. (2011) Nanosecond-range imprint and retention characterized from polarization-voltage hysteresis loops in insulating or leaky ferroelectric thin films. Applied Physics Letters, 99 (14). 142905pp. doi:10.1063/1.3647577 |
---|
Plain Text | Jiang, A. Q., Liu, X. B., Zhang, Q. (2011) Nanosecond-range imprint and retention characterized from polarization-voltage hysteresis loops in insulating or leaky ferroelectric thin films. Applied Physics Letters, 99 (14). 142905pp. doi:10.1063/1.3647577 |
---|
In | (2011, October) Applied Physics Letters Vol. 99 (14) AIP Publishing |
---|
These are possibly similar items as determined by title/reference text matching only.