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Chen, X. J., Gayral, B., Sam-Giao, D., Bougerol, C., Durand, C., Eymery, J. (2011) Catalyst-free growth of high-optical quality GaN nanowires by metal-organic vapor phase epitaxy. Applied Physics Letters, 99 (25). 251910pp. doi:10.1063/1.3671365

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Reference TypeJournal (article/letter/editorial)
TitleCatalyst-free growth of high-optical quality GaN nanowires by metal-organic vapor phase epitaxy
JournalApplied Physics Letters
AuthorsChen, X. J.Author
Gayral, B.Author
Sam-Giao, D.Author
Bougerol, C.Author
Durand, C.Author
Eymery, J.Author
Year2011 (December 19)Volume99
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.3671365Search in ResearchGate
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Mindat Ref. ID8598532Long-form Identifiermindat:1:5:8598532:2
GUID0
Full ReferenceChen, X. J., Gayral, B., Sam-Giao, D., Bougerol, C., Durand, C., Eymery, J. (2011) Catalyst-free growth of high-optical quality GaN nanowires by metal-organic vapor phase epitaxy. Applied Physics Letters, 99 (25). 251910pp. doi:10.1063/1.3671365
Plain TextChen, X. J., Gayral, B., Sam-Giao, D., Bougerol, C., Durand, C., Eymery, J. (2011) Catalyst-free growth of high-optical quality GaN nanowires by metal-organic vapor phase epitaxy. Applied Physics Letters, 99 (25). 251910pp. doi:10.1063/1.3671365
In(2011, December) Applied Physics Letters Vol. 99 (25) AIP Publishing

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Chen, X. J., Perillat-Merceroz, G., Sam-Giao, D., Durand, C., Eymery, J. (2010) Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates. Applied Physics Letters, 97 (15). 151909pp. doi:10.1063/1.3497078
Renard, J., Tourbot, G., Sam-Giao, D., Bougerol, C., Daudin, B., Gayral, B. (2010) Optical spectroscopy of cubic GaN in nanowires. Applied Physics Letters, 97 (8). 81910pp. doi:10.1063/1.3478004
Bugallo, A. De Luna, Rigutti, L., Jacopin, G., Julien, F. H., Durand, C., Chen, X. J., Salomon, D., Eymery, J., Tchernycheva, M. (2011) Single-wire photodetectors based on InGaN/GaN radial quantum wells in GaN wires grown by catalyst-free metal-organic vapor phase epitaxy. Applied Physics Letters, 98 (23). 233107pp. doi:10.1063/1.3596446
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Robin, I. C., Gauron, B., Ferret, P., Tavares, C., Feuillet, G., Dang, Le Si, Gayral, B., Gérard, J. M. (2007) Evidence for low density of nonradiative defects in ZnO nanowires grown by metal organic vapor-phase epitaxy. Applied Physics Letters, 91 (14). 143120pp. doi:10.1063/1.2794790
Sam-Giao, D., Mata, R., Tourbot, G., Renard, J., Wysmolek, A., Daudin, B., Gayral, B. (2013) Fine optical spectroscopy of the 3.45 eV emission line in GaN nanowires. Journal of Applied Physics, 113 (4). 43102pp. doi:10.1063/1.4775492
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Xi, Y. A., Chen, K. X., Mont, F., Kim, J. K., Wetzel, C., Schubert, E. F., Liu, W., Li, X., Smart, J. A. (2006) Very high quality AlN grown on (0001) sapphire by metal-organic vapor phase epitaxy. Applied Physics Letters, 89 (10). 103106pp. doi:10.1063/1.2345256
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