Woo Lee, Jae, Jang, Doyoung, Mouis, Mireille, Tachi, Kiichi, Tae Kim, Gyu, Ernst, Thomas, Ghibaudo, Gérard (2012) Short channel mobility analysis of SiGe nanowire p-type field effect transistors: Origins of the strain induced performance improvement. Applied Physics Letters, 101 (14). 143502pp. doi:10.1063/1.4756910
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Short channel mobility analysis of SiGe nanowire p-type field effect transistors: Origins of the strain induced performance improvement | ||
| Journal | Applied Physics Letters | ||
| Authors | Woo Lee, Jae | Author | |
| Jang, Doyoung | Author | ||
| Mouis, Mireille | Author | ||
| Tachi, Kiichi | Author | ||
| Tae Kim, Gyu | Author | ||
| Ernst, Thomas | Author | ||
| Ghibaudo, Gérard | Author | ||
| Year | 2012 (October) | Volume | 101 |
| Issue | 14 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.4756910Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8606196 | Long-form Identifier | mindat:1:5:8606196:6 |
| GUID | 0 | ||
| Full Reference | Woo Lee, Jae, Jang, Doyoung, Mouis, Mireille, Tachi, Kiichi, Tae Kim, Gyu, Ernst, Thomas, Ghibaudo, Gérard (2012) Short channel mobility analysis of SiGe nanowire p-type field effect transistors: Origins of the strain induced performance improvement. Applied Physics Letters, 101 (14). 143502pp. doi:10.1063/1.4756910 | ||
| Plain Text | Woo Lee, Jae, Jang, Doyoung, Mouis, Mireille, Tachi, Kiichi, Tae Kim, Gyu, Ernst, Thomas, Ghibaudo, Gérard (2012) Short channel mobility analysis of SiGe nanowire p-type field effect transistors: Origins of the strain induced performance improvement. Applied Physics Letters, 101 (14). 143502pp. doi:10.1063/1.4756910 | ||
| In | (2012, October) Applied Physics Letters Vol. 101 (14) AIP Publishing | ||
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