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Usman, Muhammad, O'Reilly, Eoin P. (2014) Atomistic tight-binding study of electronic structure and interband optical transitions in GaBixAs1−x/GaAs quantum wells. Applied Physics Letters, 104 (7). 71103pp. doi:10.1063/1.4865827

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Reference TypeJournal (article/letter/editorial)
TitleAtomistic tight-binding study of electronic structure and interband optical transitions in GaBixAs1−x/GaAs quantum wells
JournalApplied Physics Letters
AuthorsUsman, MuhammadAuthor
O'Reilly, Eoin P.Author
Year2014 (February 17)Volume104
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.4865827Search in ResearchGate
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Mindat Ref. ID8626105Long-form Identifiermindat:1:5:8626105:2
GUID0
Full ReferenceUsman, Muhammad, O'Reilly, Eoin P. (2014) Atomistic tight-binding study of electronic structure and interband optical transitions in GaBixAs1−x/GaAs quantum wells. Applied Physics Letters, 104 (7). 71103pp. doi:10.1063/1.4865827
Plain TextUsman, Muhammad, O'Reilly, Eoin P. (2014) Atomistic tight-binding study of electronic structure and interband optical transitions in GaBixAs1−x/GaAs quantum wells. Applied Physics Letters, 104 (7). 71103pp. doi:10.1063/1.4865827
In(2014, February) Applied Physics Letters Vol. 104 (7) AIP Publishing

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Usman, Muhammad, Broderick, Christopher A., Lindsay, Andrew, O’Reilly, Eoin P. (2011) Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs. Physical Review B, 84 (24) doi:10.1103/physrevb.84.245202
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Čukarić, Nemanja A., Tadić, Milan Ž., Partoens, Bart, Peeters, F. M. (2014) The interband optical absorption in silicon quantum wells: Application of the 30-band k ⋅ p model. Applied Physics Letters, 104 (24). 242103pp. doi:10.1063/1.4884122
Schulz, Stefan, Caro, Miguel A., Coughlan, Conor, O'Reilly, Eoin P. (2015) Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells. Physical Review B, 91 (3) doi:10.1103/physrevb.91.035439
Alqahtani, Saad M., Usman, Muhammad, Ahmed, Shaikh S. (2019) Unusual bandgap bowing in highly mismatched ZnOS alloys: Atomistic tight-binding band anti-crossing model. Journal of Applied Physics, 125 (23). 235704pp. doi:10.1063/1.5088824
Yokota, Nobuhide, Aoshima, Yohei, Ikeda, Kazuhiro, Kawaguchi, Hitoshi (2014) Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells. Applied Physics Letters, 104 (7). 72406pp. doi:10.1063/1.4866168
Usman, Muhammad (2014) Electronic and optical properties of [110]-tilted InAs/GaAs quantum dot stacks. Physical Review B, 89 (8) doi:10.1103/physrevb.89.081302
Tanner, Daniel P., Caro, Miguel A., O'Reilly, Eoin P., Schulz, Stefan (2016) Atomistic analysis of the electronic structure of m -plane InGaN/GaN quantum wells: Carrier localization effects in ground and excited states due to random alloy fluctuations. physica status solidi (b), 253 (5). 853-860 doi:10.1002/pssb.201552642
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