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Walker, Bright, Ullah, Mujeeb, Chae, Gil Jo, Burn, Paul L., Cho, Shinuk, Kim, Jin Young, Namdas, Ebinazar B., Seo, Jung Hwa (2014) High mobility solution-processed hybrid light emitting transistors. Applied Physics Letters, 105 (18). 183302pp. doi:10.1063/1.4900933

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Reference TypeJournal (article/letter/editorial)
TitleHigh mobility solution-processed hybrid light emitting transistors
JournalApplied Physics Letters
AuthorsWalker, BrightAuthor
Ullah, MujeebAuthor
Chae, Gil JoAuthor
Burn, Paul L.Author
Cho, ShinukAuthor
Kim, Jin YoungAuthor
Namdas, Ebinazar B.Author
Seo, Jung HwaAuthor
Year2014 (November 3)Volume105
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.4900933Search in ResearchGate
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Mindat Ref. ID8628612Long-form Identifiermindat:1:5:8628612:1
GUID0
Full ReferenceWalker, Bright, Ullah, Mujeeb, Chae, Gil Jo, Burn, Paul L., Cho, Shinuk, Kim, Jin Young, Namdas, Ebinazar B., Seo, Jung Hwa (2014) High mobility solution-processed hybrid light emitting transistors. Applied Physics Letters, 105 (18). 183302pp. doi:10.1063/1.4900933
Plain TextWalker, Bright, Ullah, Mujeeb, Chae, Gil Jo, Burn, Paul L., Cho, Shinuk, Kim, Jin Young, Namdas, Ebinazar B., Seo, Jung Hwa (2014) High mobility solution-processed hybrid light emitting transistors. Applied Physics Letters, 105 (18). 183302pp. doi:10.1063/1.4900933
In(2014, November) Applied Physics Letters Vol. 105 (18) AIP Publishing

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Muhieddine, Khalid, Ullah, Mujeeb, Pal, Bhola N., Burn, Paul, Namdas, Ebinazar B. (2014) All Solution-Processed, Hybrid Light Emitting Field-Effect Transistors. Advanced Materials, 26. 6410-6415 doi:10.1002/adma.201400938
Muhieddine, Khalid, Ullah, Mujeeb, Pal, Bhola N., Burn, Paul, Namdas, Ebinazar B. (2014) Field-Effect Transistors: All Solution-Processed, Hybrid Light Emitting Field-Effect Transistors (Adv. Mater. 37/2014). Advanced Materials, 26. 6409 doi:10.1002/adma.201470255
Chae, Gil Jo, Kim, Kang Dae, Cho, Shinuk, Walker, Bright, Seo, Jung Hwa (2016) Solution-processible organic-inorganic hybrid bipolar field-effect transistors. Journal of the Korean Physical Society, 68 (7). 889-895 doi:10.3938/jkps.68.889
Muhieddine, Khalid, Ullah, Mujeeb, Maasoumi, Fatemeh, Burn, Paul. L., Namdas, Ebinazar B. (2015) Hybrid Area-Emitting Transistors: Solution Processable and with High Aperture Ratios. Advanced Materials, 27. 6677-6682 doi:10.1002/adma.201502554
Ullah, Mujeeb, Armin, Ardalan, Tandy, Kristen, Yambem, Soniya D., Burn, Paul L., Meredith, Paul, Namdas, Ebinazar B. (2015) Defining the light emitting area for displays in the unipolar regime of highly efficient light emitting transistors. Scientific Reports, 5. doi:10.1038/srep08818
Seo, Jung Hwa, Namdas, Ebinazar B., Gutacker, Andrea, Heeger, Alan J., Bazan, Guillermo C. (2010) Conjugated polyelectrolytes for organic light emitting transistors. Applied Physics Letters, 97 (4). 43303pp. doi:10.1063/1.3467856
Ullah, Mujeeb, Tandy, Kristen, Yambem, Soniya D., Aljada, Muhsen, Burn, Paul L., Meredith, Paul, Namdas, Ebinazar B. (2013) Simultaneous Enhancement of Brightness, Efficiency, and Switching in RGB Organic Light Emitting Transistors. Advanced Materials, 25. 6213-6218 doi:10.1002/adma.201302649
Namdas, Ebinazar B., Ledochowitsch, Peter, Yuen, Jonathan D., Moses, Daniel, Heeger, Alan J. (2008) High performance light emitting transistors. Applied Physics Letters, 92 (18). 183304pp. doi:10.1063/1.2920436
Mutkins, Karyn, Gui, Ke, Aljada, Muhsen, Schwenn, Paul E., Namdas, Ebinazar B., Burn, Paul L., Meredith, Paul (2011) A solution processable fluorene-benzothiadiazole small molecule for n-type organic field-effect transistors. Applied Physics Letters, 98 (15). 153301pp. doi:10.1063/1.3569818
Namdas, Ebinazar B., Anthopoulos, Thomas D., Samuel, Ifor D. W., Frampton, Michael J., Lo, Shih-Chun, Burn, Paul L. (2005) Simple color tuning of phosphorescent dendrimer light emitting diodes. Applied Physics Letters, 86 (16). 161104pp. doi:10.1063/1.1899256
Namdas, Ebinazar B., Hsu, Ben B. Y., Liu, Zehua, Lo, Shih-Chun, Burn, Paul L., Samuel, Ifor D. W. (2009) Phosphorescent Light-Emitting Transistors: Harvesting Triplet Excitons. Advanced Materials, 21. 4957-4961 doi:10.1002/adma.200900919
 
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