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Richardson, Christopher J. K., He, Lei, Apiratikul, Paveen, Siwak, Nathan P., Leavitt, Richard P. (2015) Improved GaSb-based quantum well laser performance through metamorphic growth on GaAs substrates. Applied Physics Letters, 106 (10). 101108pp. doi:10.1063/1.4914885

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Reference TypeJournal (article/letter/editorial)
TitleImproved GaSb-based quantum well laser performance through metamorphic growth on GaAs substrates
JournalApplied Physics Letters
AuthorsRichardson, Christopher J. K.Author
He, LeiAuthor
Apiratikul, PaveenAuthor
Siwak, Nathan P.Author
Leavitt, Richard P.Author
Year2015 (March 9)Volume106
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.4914885Search in ResearchGate
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Mindat Ref. ID8632075Long-form Identifiermindat:1:5:8632075:3
GUID0
Full ReferenceRichardson, Christopher J. K., He, Lei, Apiratikul, Paveen, Siwak, Nathan P., Leavitt, Richard P. (2015) Improved GaSb-based quantum well laser performance through metamorphic growth on GaAs substrates. Applied Physics Letters, 106 (10). 101108pp. doi:10.1063/1.4914885
Plain TextRichardson, Christopher J. K., He, Lei, Apiratikul, Paveen, Siwak, Nathan P., Leavitt, Richard P. (2015) Improved GaSb-based quantum well laser performance through metamorphic growth on GaAs substrates. Applied Physics Letters, 106 (10). 101108pp. doi:10.1063/1.4914885
In(2015, March) Applied Physics Letters Vol. 106 (10) AIP Publishing

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Apiratikul, P., He, L., Richardson, C. J. K. (2013) 2 μm laterally coupled distributed-feedback GaSb-based metamorphic laser grown on a GaAs substrate. Applied Physics Letters, 102 (23). 231101pp. doi:10.1063/1.4808265
Yasuda, H., Hosako, I. (2015) Non-equilibrium Green's function calculation of AlGaAs-well-based and GaSb-based terahertz quantum cascade laser structures. Applied Physics Letters, 106 (11). 111111pp. doi:10.1063/1.4916235
Aghaeimeibodi, Shahriar, Desiatov, Boris, Kim, Je-Hyung, Lee, Chang-Min, Buyukkaya, Mustafa Atabey, Karasahin, Aziz, Richardson, Christopher J. K., Leavitt, Richard P., Lončar, Marko, Waks, Edo (2018) Integration of quantum dots with lithium niobate photonics. Applied Physics Letters, 113 (22). 221102pp. doi:10.1063/1.5054865
Gu, Y., Zhang, Y. G., Ma, Y. J., Zhou, L., Chen, X. Y., Xi, S. P., Du, B. (2015) InP-based type-I quantum well lasers up to 2.9 μm at 230 K in pulsed mode on a metamorphic buffer. Applied Physics Letters, 106 (12). 121102pp. doi:10.1063/1.4916270
Li, W. Q., Bhattacharya, P. K., Tober, R. L. (1991) Improved performance of strained InGaAs/GaAs photodiodes grown on patterned GaAs substrates by molecular beam epitaxy. Applied Physics Letters, 58 (18). 1931-1933 doi:10.1063/1.105049
Nguyen, Binh-Minh, Yi, Wei, Noah, Ramsey, Thorp, Jacob, Sokolich, Marko (2015) High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate. Applied Physics Letters, 106 (3). 32107pp. doi:10.1063/1.4906589
Komolibus, K., Piwonski, T., Gradkowski, K., Reyner, C. J., Liang, B., Huyet, G., Huffaker, D. L., Houlihan, J. (2015) Ultrafast dynamics of type-II GaSb/GaAs quantum dots. Applied Physics Letters, 106 (3). 31106pp. doi:10.1063/1.4906106
Sugg, A. R., Chen, E. I., Richard, T. A., Maranowski, S. A., Holonyak, N. (1993) n‐p‐(p+‐n+)‐n AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum‐well laser with p+‐n+ GaAs‐InGaAs tunnel contact on n‐GaAs. Applied Physics Letters, 62 (20). 2510-2512 doi:10.1063/1.109338
Behet, M., van der Zanden, K., Borghs, G., Behres, A. (1998) Metamorphic InGaAs/InAlAs quantum well structures grown on GaAs substrates for high electron mobility transistor applications. Applied Physics Letters, 73 (19). 2760-2762 doi:10.1063/1.122582
(2009) Hybrid structure laser based on semiconductor nanowires and a silica microfiber knot cavity. Applied Physics Letters, 94 (10). 101108pp. doi:10.1063/1.3093821
Leavitt, R. P., Bradshaw, J. L. (1991) Transit‐time effects on photocurrent spectra of multiple quantum well diodes. Applied Physics Letters, 59 (19). 2433-2435 doi:10.1063/1.106012
 
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