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Chen, Wanghua, Pareige, Philippe, Roca i Cabarrocas, Pere (2016) Three-dimensional atomic mapping of hydrogenated polymorphous silicon solar cells. Applied Physics Letters, 108 (25). 253110pp. doi:10.1063/1.4954707

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Reference TypeJournal (article/letter/editorial)
TitleThree-dimensional atomic mapping of hydrogenated polymorphous silicon solar cells
JournalApplied Physics Letters
AuthorsChen, WanghuaAuthor
Pareige, PhilippeAuthor
Roca i Cabarrocas, PereAuthor
Year2016 (June 20)Volume108
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.4954707Search in ResearchGate
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Mindat Ref. ID8641036Long-form Identifiermindat:1:5:8641036:6
GUID0
Full ReferenceChen, Wanghua, Pareige, Philippe, Roca i Cabarrocas, Pere (2016) Three-dimensional atomic mapping of hydrogenated polymorphous silicon solar cells. Applied Physics Letters, 108 (25). 253110pp. doi:10.1063/1.4954707
Plain TextChen, Wanghua, Pareige, Philippe, Roca i Cabarrocas, Pere (2016) Three-dimensional atomic mapping of hydrogenated polymorphous silicon solar cells. Applied Physics Letters, 108 (25). 253110pp. doi:10.1063/1.4954707
In(2016, June) Applied Physics Letters Vol. 108 (25) AIP Publishing

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Chen, Wanghua, Pareige, Philippe, Castro, Celia, Xu, Tao, Grandidier, Bruno, Stiévenard, Didier, Roca i Cabarrocas, Pere (2015) Atomic characterization of Au clusters in vapor-liquid-solid grown silicon nanowires. Journal of Applied Physics, 118 (10). 104301pp. doi:10.1063/1.4930143
Yu, Linwei, Chen, Wanghua, O’Donnell, Benedict, Patriarche, Gilles, Bouchoule, Sophie, Pareige, Philippe, Rogel, Regis, Claire Salaun, Anne, Pichon, Laurent, Roca i Cabarrocas, Pere (2011) Growth-in-place deployment of in-plane silicon nanowires. Applied Physics Letters, 99 (20). 203104pp. doi:10.1063/1.3659895
Chen, Wanghua, Roca i Cabarrocas, Pere (2016) Insights into gold-catalyzed plasma-assisted CVD growth of silicon nanowires. Applied Physics Letters, 109 (4). 43108pp. doi:10.1063/1.4960106
Chen, Wanghua, Yu, Linwei, Misra, Soumyadeep, Fan, Zheng, Pareige, Philippe, Patriarche, Gilles, Bouchoule, Sophie, Cabarrocas, Pere Roca i (2014) Incorporation and redistribution of impurities into silicon nanowires during metal-particle-assisted growth. Nature Communications, 5. doi:10.1038/ncomms5134
Misra, Soumyadeep, Yu, Linwei, Chen, Wanghua, Foldyna, Martin, Cabarrocas, Pere Roca i (2014) A review on plasma-assisted VLS synthesis of silicon nanowires and radial junction solar cells. Journal of Physics D: Applied Physics, 47. 393001pp. doi:10.1088/0022-3727/47/39/393001
Zheng, Lulu, Azrak, Edy, Gong, Ruiling, Castro, Celia, Duguay, Sébastien, Pareige, Philippe, Roca i Cabarrocas, Pere, Chen, Wanghua (2022) Investigation of Sn-containing precursors for in-plane GeSn nanowire growth. Journal of Alloys and Compounds, 899. 163273pp. doi:10.1016/j.jallcom.2021.163273
Azrak, Edy, Xue, Zhaoguo, Liu, Shuai, Chen, Wanghua, Castro, Celia, Duguay, Sébastien, Pareige, Philippe, Yu, Linwei, Roca i Cabarrocas, Pere (2023) Ultrahigh Incorporation of Tin in SiSn Nanowires Grown via In-Plane Solid-Liquid-Solid Mechanism. Applied Surface Science, 618. 156637 doi:10.1016/j.apsusc.2023.156637
Cabarrocas, Pere Roca i (1994) Deposition of intrinsic, phosphorus‐doped, and boron‐doped hydrogenated amorphous silicon films at 50 °C. Applied Physics Letters, 65 (13). 1674-1676 doi:10.1063/1.112882
Azrak, Edy, Chen, Wanghua, Moldovan, Simona, Duguay, Sébastien, Pareige, Philippe, Roca i Cabarrocas, Pere (2020) Low-Temperature Plasma-Assisted Growth of Core–Shell GeSn Nanowires with 30% Sn. The Journal of Physical Chemistry C, 124 (1). 1220-1226 doi:10.1021/acs.jpcc.9b10444
Massiot, Inès, Colin, Clément, Péré-Laperne, Nicolas, Roca i Cabarrocas, Pere, Sauvan, Christophe, Lalanne, Philippe, Pelouard, Jean-Luc, Collin, Stéphane (2012) Nanopatterned front contact for broadband absorption in ultra-thin amorphous silicon solar cells. Applied Physics Letters, 101 (16). 163901pp. doi:10.1063/1.4758468
Wang, Junzhuan, Suendo, V., Abramov, A., Yu, Linwei, Roca i Cabarrocas, Pere (2010) Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism. Applied Physics Letters, 97 (22). 221113pp. doi:10.1063/1.3521280
 
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