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Hu, Tingwei, Fang, Qinglong, Zhang, Xiaohe, Liu, Xiangtai, Ma, Dayan, Wei, Ran, Xu, Kewei, Ma, Fei (2018) Enhanced n-doping of epitaxial graphene on SiC by bismuth. Applied Physics Letters, 113 (1). 11602pp. doi:10.1063/1.5029541

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Reference TypeJournal (article/letter/editorial)
TitleEnhanced n-doping of epitaxial graphene on SiC by bismuth
JournalApplied Physics Letters
AuthorsHu, TingweiAuthor
Fang, QinglongAuthor
Zhang, XiaoheAuthor
Liu, XiangtaiAuthor
Ma, DayanAuthor
Wei, RanAuthor
Xu, KeweiAuthor
Ma, FeiAuthor
Year2018 (July 2)Volume113
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.5029541Search in ResearchGate
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Mindat Ref. ID8653497Long-form Identifiermindat:1:5:8653497:6
GUID0
Full ReferenceHu, Tingwei, Fang, Qinglong, Zhang, Xiaohe, Liu, Xiangtai, Ma, Dayan, Wei, Ran, Xu, Kewei, Ma, Fei (2018) Enhanced n-doping of epitaxial graphene on SiC by bismuth. Applied Physics Letters, 113 (1). 11602pp. doi:10.1063/1.5029541
Plain TextHu, Tingwei, Fang, Qinglong, Zhang, Xiaohe, Liu, Xiangtai, Ma, Dayan, Wei, Ran, Xu, Kewei, Ma, Fei (2018) Enhanced n-doping of epitaxial graphene on SiC by bismuth. Applied Physics Letters, 113 (1). 11602pp. doi:10.1063/1.5029541
In(2018, July) Applied Physics Letters Vol. 113 (1) AIP Publishing

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Hu, Tingwei, Ma, Dayan, Fang, Qinglong, Zhang, Peng, Liu, Xiangtai, Wei, Ran, Pan, Yi, Xu, Kewei, Ma, Fei (2019) Bismuth mediated defect engineering of epitaxial graphene on SiC(0001). Carbon, 146. 313-319 doi:10.1016/j.carbon.2019.02.014
Hu, Tingwei, Hui, Xin, Zhang, Xiaohe, Liu, Xiangtai, Ma, Dayan, Wei, Ran, Xu, Kewei, Ma, Fei (2018) Nanostructured Bi Grown on Epitaxial Graphene/SiC. The Journal of Physical Chemistry Letters, 9 (19). 5679-5684 doi:10.1021/acs.jpclett.8b02246
Liu, Xiangtai, Fang, Qinglong, Hu, Tingwei, Ma, Dayan, Zhang, Xiaohe, Liu, Shuai, Ma, Fei, Xu, Kewei (2018) Thickness dependent Raman spectra and interfacial interaction between Ag and epitaxial graphene on 6H-SiC(0001). Physical Chemistry Chemical Physics, 20 (8). 5964-5974 doi:10.1039/c7cp07338k
Hu, Tingwei, Liu, Xiangtai, Ma, Dayan, Wei, Ran, Xu, Kewei, Ma, Fei (2018) Formation of Micro- and Nano-Trenches on Epitaxial Graphene. Applied Sciences, 8. 2518pp. doi:10.3390/app8122518
Liu, Xiangtai, Hu, Tingwei, Miao, Yaping, Ma, Dayan, Yang, Zhi, Ma, Fei, Xu, Kewei, Chu, Paul K. (2016) Substitutional doping of Ag into epitaxial graphene on 6H-SiC substrates during thermal decomposition. Carbon, 104. 233-240 doi:10.1016/j.carbon.2016.04.007
Hu, Tingwei, Bao, Hongwei, Liu, Shuai, Liu, Xiangtai, Ma, Dayan, Ma, Fei, Xu, Kewei (2017) Near-free-standing epitaxial graphene on rough SiC substrate by flash annealing at high temperature. Carbon, 120. 219-225 doi:10.1016/j.carbon.2017.05.046
Hu, Tingwei, Bao, Hongwei, Liu, Shuai, Liu, Xiangtai, Ma, Dayan, Ma, Fei, Xu, Kewei (2017) Corrigendum to “Near-free-standing epitaxial graphene on rough SiC substrate by flash annealing at high temperature” [Carbon 120 (2017) 219–225]. Carbon, 122. 514pp. doi:10.1016/j.carbon.2017.06.056
Hu, Tingwei, Ma, Dayan, Ma, Fei, Xu, Kewei, Chu, Paul K. (2013) Direct and diffuse reflection of electron waves at armchair edges of epitaxial graphene. RSC Advances, 3 (48). 25735pp. doi:10.1039/c3ra43215g
Yang, Dong, Ma, Fei, Bian, Xianglong, Xia, Qianfeng, Xu, Kewei, Hu, Tingwei (2024) The growth of epitaxial graphene on SiC and its metal intercalation: a review. Journal of Physics: Condensed Matter, 36 (17) 173003 doi:10.1088/1361-648x/ad201a
Hu, Tingwei, Yang, Dong, Gao, Haitao, Li, Yan, Liu, Xiangtai, Xu, Kewei, Xia, Qianfeng, Ma, Fei (2021) Atomic structure and electronic properties of the intercalated Pb atoms underneath a graphene layer. Carbon, 179. 151-158 doi:10.1016/j.carbon.2021.04.020
Hu, Tingwei, Yang, Dong, Hu, Wei, Xia, Qianfeng, Ma, Fei, Xu, Kewei (2021) The structure and mechanism of large-scale indium-intercalated graphene transferred from SiC buffer layer. Carbon, 171. 829-836 doi:10.1016/j.carbon.2020.09.055
 
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