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Silva, J. M. B., Silva, J. P. B., Sekhar, K. C., Pereira, M., Gomes, M. J. M. (2018) Impact of the ferroelectric layer thickness on the resistive switching characteristics of ferroelectric/dielectric structures. Applied Physics Letters, 113 (10). 102904pp. doi:10.1063/1.5047853

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Reference TypeJournal (article/letter/editorial)
TitleImpact of the ferroelectric layer thickness on the resistive switching characteristics of ferroelectric/dielectric structures
JournalApplied Physics Letters
AuthorsSilva, J. M. B.Author
Silva, J. P. B.Author
Sekhar, K. C.Author
Pereira, M.Author
Gomes, M. J. M.Author
Year2018 (September 3)Volume113
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.5047853Search in ResearchGate
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Mindat Ref. ID8653644Long-form Identifiermindat:1:5:8653644:2
GUID0
Full ReferenceSilva, J. M. B., Silva, J. P. B., Sekhar, K. C., Pereira, M., Gomes, M. J. M. (2018) Impact of the ferroelectric layer thickness on the resistive switching characteristics of ferroelectric/dielectric structures. Applied Physics Letters, 113 (10). 102904pp. doi:10.1063/1.5047853
Plain TextSilva, J. M. B., Silva, J. P. B., Sekhar, K. C., Pereira, M., Gomes, M. J. M. (2018) Impact of the ferroelectric layer thickness on the resistive switching characteristics of ferroelectric/dielectric structures. Applied Physics Letters, 113 (10). 102904pp. doi:10.1063/1.5047853
In(2018, September) Applied Physics Letters Vol. 113 (10) AIP Publishing

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Sekhar, K. C., Silva, J. P. B., Kamakshi, Koppole, Pereira, M., Gomes, M. J. M. (2013) Semiconductor layer thickness impact on optical and resistive switching behavior of pulsed laser deposited BaTiO3/ZnO heterostructures. Applied Physics Letters, 102 (21). 212903pp. doi:10.1063/1.4809531
Silva, J. P. B., Faita, F. L., Kamakshi, K., Sekhar, K. C., Moreira, J. Agostinho, Almeida, A., Pereira, M., Pasa, A. A., Gomes, M. J. M. (2017) Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer. Scientific Reports, 7. doi:10.1038/srep46350
Silva, J P B, Kamakshi, K, Sekhar, K C, Queirós, E C, Agostinho Moreira, J, Almeida, A, Pereira, M, Tavares, P B, Gomes, M J M (2016) Resistive switching in ferroelectric lead-free 0.5Ba (Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3thin films. Journal of Physics D: Applied Physics, 49. 335301pp. doi:10.1088/0022-3727/49/33/335301
Silva, J. P. B., Kamakshi, K., Negrea, R. F., Ghica, C., Wang, J., Koster, G., Rijnders, G., Figueiras, F., Pereira, M., Gomes, M. J. M. (2018) Ferroelectric switching dynamics in 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 thin films. Applied Physics Letters, 113 (8). 82903pp. doi:10.1063/1.5044623
Silva, J. P. B., Sekhar, K. C., Almeida, A., Agostinho Moreira, J., Pereira, M., Gomes, M. J. M. (2013) Effects of oxygen partial pressure on the ferroelectric properties of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films. Applied Physics A, 113. 817-824 doi:10.1007/s00339-013-7602-x
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Silva, J. P. B., Sekhar, K. C., Almeida, A., Moreira, J. Agostinho, Pereira, M., Gomes, M. J. M. (2013) Influence of laser repetition rate on ferroelectric properties of pulsed laser deposited BaTiO3 films on platinized silicon substrate. Applied Physics A, 113. 379-384 doi:10.1007/s00339-013-7948-0
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Silva, J. P. B., Vieira, E. M. F., Silva, J. M. B., Gwozdz, K., Figueiras, F. G., Veltruská, K., Matolín, V., Istrate, M. C., Ghica, C., Sekhar, K. C., Kholkin, A. L., Goncalves, L. M., Chahboun, A., Pereira, M. (2020) Perovskite ferroelectric thin film as an efficient interface to enhance the photovoltaic characteristics of Si/SnOx heterojunctions. Journal of Materials Chemistry A, 8 (22) 11314-11326 doi:10.1039/d0ta02198a
 
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