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Kondo, Y., Aoyama, Y., Hashiguchi, H., Lin, C. C., Hsu, K., Endo, N., Asayama, K., Fukunaga, K-I. (2019) Strain measurement of a channel between Si/Ge stressors in a tri-gate field effect transistor utilizing moiré fringes in scanning transmission microscope images. Applied Physics Letters, 114 (17). 172103pp. doi:10.1063/1.5084161

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Reference TypeJournal (article/letter/editorial)
TitleStrain measurement of a channel between Si/Ge stressors in a tri-gate field effect transistor utilizing moiré fringes in scanning transmission microscope images
JournalApplied Physics Letters
AuthorsKondo, Y.Author
Aoyama, Y.Author
Hashiguchi, H.Author
Lin, C. C.Author
Hsu, K.Author
Endo, N.Author
Asayama, K.Author
Fukunaga, K-I.Author
Year2019 (April 29)Volume114
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.5084161Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8656432Long-form Identifiermindat:1:5:8656432:0
GUID0
Full ReferenceKondo, Y., Aoyama, Y., Hashiguchi, H., Lin, C. C., Hsu, K., Endo, N., Asayama, K., Fukunaga, K-I. (2019) Strain measurement of a channel between Si/Ge stressors in a tri-gate field effect transistor utilizing moiré fringes in scanning transmission microscope images. Applied Physics Letters, 114 (17). 172103pp. doi:10.1063/1.5084161
Plain TextKondo, Y., Aoyama, Y., Hashiguchi, H., Lin, C. C., Hsu, K., Endo, N., Asayama, K., Fukunaga, K-I. (2019) Strain measurement of a channel between Si/Ge stressors in a tri-gate field effect transistor utilizing moiré fringes in scanning transmission microscope images. Applied Physics Letters, 114 (17). 172103pp. doi:10.1063/1.5084161
In(2019, April) Applied Physics Letters Vol. 114 (17) AIP Publishing

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Kondo, Yukihito, Endo, Noriaki, Fukunaga, Kei-ichi, Aoyama, Yoshitaka, Asayama, Kyoichiro, Lin, Ching Chun, Kim, Hsu (2018) Strain Analysis of FinFET Device Utilizing Moiré Fringes in Scanning Transmission Electron Microscopy. Microscopy and Microanalysis, 24. 978-979 doi:10.1017/s143192761800538x
Liao, J. C., Fang, Y. K., Hou, Y. T., Hung, C. L., Hsu, P. F., Lin, K. C., Huang, K. T., Lee, T. L., Liang, M. S. (2008) Strain effect and channel length dependence of bias temperature instability on complementary metal-oxide-semiconductor field effect transistors with high-k/SiO2 gate stacks. Applied Physics Letters, 93 (9). 92101pp. doi:10.1063/1.2967442
Oshima, Y, Hashimoto, Y, Sawada, H, Hashikawa, N, Asayama, K, Kondo, Y, Tanishiro, Y, Takayanagi, K (2009) Detection of Arsenic Dopant Atoms in Silicon Crystal by Aberration Corrected Scanning Transmission Electron Microscope. Microscopy and Microanalysis, 15. 1488-1489 doi:10.1017/s1431927609095233
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Tsukagoshi, K., Shigeto, K., Yagi, I., Aoyagi, Y. (2006) Interface modification of a pentacene field-effect transistor with a submicron channel. Applied Physics Letters, 89 (11). 113507pp. doi:10.1063/1.2348736
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Hsu, William, Mantey, Jason, Register, Leonard F., Banerjee, Sanjay K. (2013) Strained-Si/strained-Ge type-II staggered heterojunction gate-normal-tunneling field-effect transistor. Applied Physics Letters, 103 (9). 93501pp. doi:10.1063/1.4819458
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