Inoue, Hisashi, Yoon, Hyeok, Merz, Tyler A., Swartz, Adrian G., Hong, Seung Sae, Hikita, Yasuyuki, Hwang, Harold Y. (2019) Delta-doped SrTiO3 top-gated field effect transistor. Applied Physics Letters, 114 (23). 231605pp. doi:10.1063/1.5090269
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Delta-doped SrTiO3 top-gated field effect transistor | ||
Journal | Applied Physics Letters | ||
Authors | Inoue, Hisashi | Author | |
Yoon, Hyeok | Author | ||
Merz, Tyler A. | Author | ||
Swartz, Adrian G. | Author | ||
Hong, Seung Sae | Author | ||
Hikita, Yasuyuki | Author | ||
Hwang, Harold Y. | Author | ||
Year | 2019 (June 10) | Volume | 114 |
Issue | 23 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.5090269Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8657041 | Long-form Identifier | mindat:1:5:8657041:9 |
GUID | 0 | ||
Full Reference | Inoue, Hisashi, Yoon, Hyeok, Merz, Tyler A., Swartz, Adrian G., Hong, Seung Sae, Hikita, Yasuyuki, Hwang, Harold Y. (2019) Delta-doped SrTiO3 top-gated field effect transistor. Applied Physics Letters, 114 (23). 231605pp. doi:10.1063/1.5090269 | ||
Plain Text | Inoue, Hisashi, Yoon, Hyeok, Merz, Tyler A., Swartz, Adrian G., Hong, Seung Sae, Hikita, Yasuyuki, Hwang, Harold Y. (2019) Delta-doped SrTiO3 top-gated field effect transistor. Applied Physics Letters, 114 (23). 231605pp. doi:10.1063/1.5090269 | ||
In | (2019, June) Applied Physics Letters Vol. 114 (23) AIP Publishing |
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