Reference Type | Journal (article/letter/editorial) |
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Title | A study of vacancy-type defects by positron-lifetime measurements in a II-VI semiconductor: Cd0.2Hg0.8Te |
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Journal | Journal of Physics: Condensed Matter |
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Authors | Gely, C | Author |
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Corbel, C | Author |
Triboulet, R | Author |
Year | 1990 (May 28) | Volume | 2 |
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Issue | 21 |
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Publisher | IOP Publishing |
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DOI | doi:10.1088/0953-8984/2/21/011Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 8664166 | Long-form Identifier | mindat:1:5:8664166:5 |
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GUID | 0 |
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Full Reference | Gely, C, Corbel, C, Triboulet, R (1990) A study of vacancy-type defects by positron-lifetime measurements in a II-VI semiconductor: Cd0.2Hg0.8Te. Journal of Physics: Condensed Matter, 2 (21). 4763-4767 doi:10.1088/0953-8984/2/21/011 |
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Plain Text | Gely, C, Corbel, C, Triboulet, R (1990) A study of vacancy-type defects by positron-lifetime measurements in a II-VI semiconductor: Cd0.2Hg0.8Te. Journal of Physics: Condensed Matter, 2 (21). 4763-4767 doi:10.1088/0953-8984/2/21/011 |
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In | (1990, May) Journal of Physics: Condensed Matter Vol. 2 (21) IOP Publishing |
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