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Combescot, R, Schreder, G (1973) Tunnelling in metal-semiconductor contacts. I. Influence of the impurities. Journal of Physics C: Solid State Physics, 6 (8). 1363-1384 doi:10.1088/0022-3719/6/8/005

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Reference TypeJournal (article/letter/editorial)
TitleTunnelling in metal-semiconductor contacts. I. Influence of the impurities
JournalJournal of Physics C: Solid State Physics
AuthorsCombescot, RAuthor
Schreder, GAuthor
Year1973 (April 26)Volume6
Issue8
PublisherIOP Publishing
DOIdoi:10.1088/0022-3719/6/8/005Search in ResearchGate
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Mindat Ref. ID8889175Long-form Identifiermindat:1:5:8889175:0
GUID0
Full ReferenceCombescot, R, Schreder, G (1973) Tunnelling in metal-semiconductor contacts. I. Influence of the impurities. Journal of Physics C: Solid State Physics, 6 (8). 1363-1384 doi:10.1088/0022-3719/6/8/005
Plain TextCombescot, R, Schreder, G (1973) Tunnelling in metal-semiconductor contacts. I. Influence of the impurities. Journal of Physics C: Solid State Physics, 6 (8). 1363-1384 doi:10.1088/0022-3719/6/8/005
In(1973, April) Journal of Physics C: Solid State Physics Vol. 6 (8) IOP Publishing

See Also

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Combescot, R, Schreder, G (1974) Tunnelling in metal-semiconductor contacts. II. Influence of the electron-phonon interaction. Journal of Physics C: Solid State Physics, 7 (7). 1318-1336 doi:10.1088/0022-3719/7/7/024
Birkner, G K, Schattke, W (1975) Tunnelling assisted by localized magnetic impurities. Journal of Physics C: Solid State Physics, 8 (8). 1205-1222 doi:10.1088/0022-3719/8/8/023
Inkson, J C (1973) Many-body effect at metal-semiconductor junctions. II. The self energy and band structure distortion. Journal of Physics C: Solid State Physics, 6 (8). 1350-1362 doi:10.1088/0022-3719/6/8/004
Flores, F, Louis, E, Yndurain, F (1973) One-electron properties of the metal-semiconductor junction for zincblende compounds. Journal of Physics C: Solid State Physics, 6 (24). doi:10.1088/0022-3719/6/24/005
Fletcher, J R (1973) Correlation functions of impurities in solids. Journal of Physics C: Solid State Physics, 6 (16). doi:10.1088/0022-3719/6/16/002
Baxter, R J (1973) Potts model at the critical temperature. Journal of Physics C: Solid State Physics, 6 (23). doi:10.1088/0022-3719/6/23/005
Tsai, D H, MacDonald, R A (1973) Second sound in a solid under shock compression. Journal of Physics C: Solid State Physics, 6 (8). doi:10.1088/0022-3719/6/8/001
Montgomery, V, Williams, R H, Srivastava, G P (1981) The influence of adsorbed layers in controlling Schottky barriers. Journal of Physics C: Solid State Physics, 14 (8). doi:10.1088/0022-3719/14/8/005
Calandra, C, Santoro, G (1975) Journal of Physics C: Solid State Physics, 8 (6). IOP Publishing. doi:10.1088/0022-3719/8/6/002
Abdullah, T, Durrani, I U R, Shah, H A (1988) Modulational instability of acoustic waves in a piezoelectric semiconductor. Journal of Physics C: Solid State Physics, 21 (6). doi:10.1088/0022-3719/21/6/005
Parrott, J E (1973) A transport equation treatment of tunnelling in semiconductors. Journal of Physics C: Solid State Physics, 6 (6). 997-1006 doi:10.1088/0022-3719/6/6/014
 
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