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Grant, A J, Griffiths, T M, Pitt, G D, Yoffe, A D (1975) The electrical properties and the magnitude of the indirect gap in the semiconducting transition metal dichalcogenide layer crystals. Journal of Physics C: Solid State Physics, 8 (1). doi:10.1088/0022-3719/8/1/004

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Reference TypeJournal (article/letter/editorial)
TitleThe electrical properties and the magnitude of the indirect gap in the semiconducting transition metal dichalcogenide layer crystals
JournalJournal of Physics C: Solid State Physics
AuthorsGrant, A JAuthor
Griffiths, T MAuthor
Pitt, G DAuthor
Yoffe, A DAuthor
Year1975 (January 7)Volume8
Issue1
PublisherIOP Publishing
DOIdoi:10.1088/0022-3719/8/1/004Search in ResearchGate
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Mindat Ref. ID8889773Long-form Identifiermindat:1:5:8889773:6
GUID0
Full ReferenceGrant, A J, Griffiths, T M, Pitt, G D, Yoffe, A D (1975) The electrical properties and the magnitude of the indirect gap in the semiconducting transition metal dichalcogenide layer crystals. Journal of Physics C: Solid State Physics, 8 (1). doi:10.1088/0022-3719/8/1/004
Plain TextGrant, A J, Griffiths, T M, Pitt, G D, Yoffe, A D (1975) The electrical properties and the magnitude of the indirect gap in the semiconducting transition metal dichalcogenide layer crystals. Journal of Physics C: Solid State Physics, 8 (1). doi:10.1088/0022-3719/8/1/004
In(1975, January) Journal of Physics C: Solid State Physics Vol. 8 (1) IOP Publishing

See Also

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Grant, A J, Griffiths, T M, Yoffe, A D, Pitt, G D (1974) Pressure-induced semimetal-metal and metal-metal transitions in 1T and 2H TaS2. Journal of Physics C: Solid State Physics, 7 (14). doi:10.1088/0022-3719/7/14/001
Pitt, G D, Stewart, C E E (1975) The electrical properties of GaAs1-xpxalloys from a high-pressure experiment. Journal of Physics C: Solid State Physics, 8 (9). 1397-1344 doi:10.1088/0022-3719/8/9/011
Rapoport, E, Pitt, G D, Saunders, G A (1975) Pressure-induced phase transitions in InBi. Journal of Physics C: Solid State Physics, 8 (21). doi:10.1088/0022-3719/8/21/007
Laithwaite, K, Newman, R C, Greene, P D (1975) The localized vibrations of charged and uncharged impurities in GaAs and GaP. Journal of Physics C: Solid State Physics, 8 (5). doi:10.1088/0022-3719/8/5/004
Newman, D J, Balasubramanian, G (1975) Parametrization of rare-earth ion transition intensities. Journal of Physics C: Solid State Physics, 8 (1). 37-44 doi:10.1088/0022-3719/8/1/008
Pitt, G D, Vyas, M K R (1975) Pressure effects on the threshold for high-field instabilities in InP. Journal of Physics C: Solid State Physics, 8 (2). 138-146 doi:10.1088/0022-3719/8/2/008
Pickering, C, Adams, A R, Pitt, G D, Vyas, M K R (1975) The effect of pressure on the high electric field instabilities in n-type GaAs. Journal of Physics C: Solid State Physics, 8 (2). 129-137 doi:10.1088/0022-3719/8/2/007
Rao, K V, Rapp, O, Johannesson, Ch, Geldart, D J W, Richard, T G (1975) Electrical resistance at the antiferro-paramagnetic transition in dysprosium. Journal of Physics C: Solid State Physics, 8 (13). 2135-2148 doi:10.1088/0022-3719/8/13/023
Inglesfield, J E (1980) Bonding and phase transitions in transition metal dichalcogenide layer compounds. Journal of Physics C: Solid State Physics, 13 (1). 17-36 doi:10.1088/0022-3719/13/1/007
Glynn, T J, Harley, R T, Hayes, W, Rushworth, A J, Smith, S H (1975) The phase transitions in PrpLa1-pAlO3. Journal of Physics C: Solid State Physics, 8 (8). doi:10.1088/0022-3719/8/8/004
Suffczynski, M (1975) The long-range exchange interaction in excitons. Journal of Physics C: Solid State Physics, 8 (19). doi:10.1088/0022-3719/8/19/004
 
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