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Chattopadhyay, D, Nag, B R (1978) Effect of ionised impurity scattering on hot-electron diffusion in silicon. Journal of Physics C: Solid State Physics, 11 (10). 2055-2059 doi:10.1088/0022-3719/11/10/015

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Reference TypeJournal (article/letter/editorial)
TitleEffect of ionised impurity scattering on hot-electron diffusion in silicon
JournalJournal of Physics C: Solid State Physics
AuthorsChattopadhyay, DAuthor
Nag, B RAuthor
Year1978 (May 28)Volume11
Issue10
PublisherIOP Publishing
DOIdoi:10.1088/0022-3719/11/10/015Search in ResearchGate
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Mindat Ref. ID8891639Long-form Identifiermindat:1:5:8891639:6
GUID0
Full ReferenceChattopadhyay, D, Nag, B R (1978) Effect of ionised impurity scattering on hot-electron diffusion in silicon. Journal of Physics C: Solid State Physics, 11 (10). 2055-2059 doi:10.1088/0022-3719/11/10/015
Plain TextChattopadhyay, D, Nag, B R (1978) Effect of ionised impurity scattering on hot-electron diffusion in silicon. Journal of Physics C: Solid State Physics, 11 (10). 2055-2059 doi:10.1088/0022-3719/11/10/015
In(1978, May) Journal of Physics C: Solid State Physics Vol. 11 (10) IOP Publishing

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Angelov, B M (1978) f-d interaction in doubly ionised lanthanides. Journal of Physics C: Solid State Physics, 11 (17). doi:10.1088/0022-3719/11/17/001
Chattopadhyay, D, Nag, B R (1976) Warm electrons in polar semiconductors. Journal of Physics C: Solid State Physics, 9 (16). 3095-3103 doi:10.1088/0022-3719/9/16/015
Laskar, A L (1978) The effect of impurity doping on the diffusion of Sr2+in AgCl. Journal of Physics C: Solid State Physics, 11 (16). 3397-3401 doi:10.1088/0022-3719/11/16/009
Collins, A T (1978) Migration of nitrogen in electron-irradiated type Ib diamond. Journal of Physics C: Solid State Physics, 11 (10). doi:10.1088/0022-3719/11/10/002
Inkson, J C, Bennett, M (1978) Exchange and correlation potential in silicon. II. Journal of Physics C: Solid State Physics, 11 (10). 2017-2027 doi:10.1088/0022-3719/11/10/012
Mehrotra, R, Mahanty, J (1978) Free electron contribution to the workfunction of metals. Journal of Physics C: Solid State Physics, 11 (10). 2061-2064 doi:10.1088/0022-3719/11/10/016
Chaddah, P (1978) Electron momentum density in a model substitutionally disordered alloy. Journal of Physics C: Solid State Physics, 11 (10). 2001-2007 doi:10.1088/0022-3719/11/10/010
Walmsley, D G, Floyd, R B, Read, S F J (1978) Inelastic electron tunnelling spectral lineshapes below 10 mK. Journal of Physics C: Solid State Physics, 11 (3). doi:10.1088/0022-3719/11/3/005
Nag, B R, Dutta, G M (1977) Electron mobility in InP. Journal of Physics C: Solid State Physics, 11 (1). 119-123 doi:10.1088/0022-3719/11/1/022
Richardson, D D (1978) Van der Waals electron correlation energy in silicon. Journal of Physics C: Solid State Physics, 11 (18). 3779-3785 doi:10.1088/0022-3719/11/18/014
Wallace, P R, Joos, B (1978) Violation of selection rules for phonon-induced intervalley transitions in silicon. Journal of Physics C: Solid State Physics, 11 (2). 303-313 doi:10.1088/0022-3719/11/2/015
 
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