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Henry, M O, Lightowlers, E C (1978) Excitation density dependence of the luminescence from bound multi-exciton complexes in phosphorus doped silicon. Journal of Physics C: Solid State Physics, 11 (13). doi:10.1088/0022-3719/11/13/011

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Reference TypeJournal (article/letter/editorial)
TitleExcitation density dependence of the luminescence from bound multi-exciton complexes in phosphorus doped silicon
JournalJournal of Physics C: Solid State Physics
AuthorsHenry, M OAuthor
Lightowlers, E CAuthor
Year1978 (July 14)Volume11
Issue13
PublisherIOP Publishing
DOIdoi:10.1088/0022-3719/11/13/011Search in ResearchGate
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Mindat Ref. ID8891719Long-form Identifiermindat:1:5:8891719:1
GUID0
Full ReferenceHenry, M O, Lightowlers, E C (1978) Excitation density dependence of the luminescence from bound multi-exciton complexes in phosphorus doped silicon. Journal of Physics C: Solid State Physics, 11 (13). doi:10.1088/0022-3719/11/13/011
Plain TextHenry, M O, Lightowlers, E C (1978) Excitation density dependence of the luminescence from bound multi-exciton complexes in phosphorus doped silicon. Journal of Physics C: Solid State Physics, 11 (13). doi:10.1088/0022-3719/11/13/011
In(1978, July) Journal of Physics C: Solid State Physics Vol. 11 (13) IOP Publishing

See Also

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Henry, M O, Lightowlers, E C (1980) Uniaxial stress analysis of bound-exciton excited states in lithium-doped silicon. Journal of Physics C: Solid State Physics, 13 (11). 2215-2224 doi:10.1088/0022-3719/13/11/021
Lightowlers, E C, Henry, M O (1977) Fine structure in the bound exciton and multiple bound exciton luminescence from aluminium-doped silicon. Journal of Physics C: Solid State Physics, 10 (9). doi:10.1088/0022-3719/10/9/005
Mayer, A E, Lightowlers, E C (1979) Bound-exciton luminescence and absorption in phosphorus-doped germanium. Journal of Physics C: Solid State Physics, 12 (13). doi:10.1088/0022-3719/12/13/010
Henry, M O, Lightowlers, E C (1977) Absorption due to the creation of bound excitons in phosphorus-doped silicon. Journal of Physics C: Solid State Physics, 10 (21). doi:10.1088/0022-3719/10/21/003
Henry, M O, Lightowlers, E C, Killoran, N, Dunstan, D J, Cavenett, B C (1981) Bound exciton recombination in beryllium-doped silicon. Journal of Physics C: Solid State Physics, 14 (10). doi:10.1088/0022-3719/14/10/002
Lightowlers, E C, Penchina, C M (1978) Fine structure in the cathodoluminescence spectrum from chromium-doped gallium arsenide. Journal of Physics C: Solid State Physics, 11 (9). doi:10.1088/0022-3719/11/9/011
Henry, M O, Lightowlers, E C (1979) Absorption and luminescence transitions involving excited hole states of excitons bound to lithium donors in silicon. Journal of Physics C: Solid State Physics, 12 (12). doi:10.1088/0022-3719/12/12/007
Lightowlers, E C, Henry, M O, Vouk, M A (1977) Luminescence associated with transitions from an excited state of the bound excitons in P, As, Sb and Bi doped Si. Journal of Physics C: Solid State Physics, 10 (24). doi:10.1088/0022-3719/10/24/008
Mayer, A E, Lightowlers, E C (1979) Donor bound exciton luminescence and absorption in germanium. Journal of Physics C: Solid State Physics, 12 (24). doi:10.1088/0022-3719/12/24/005
Lightowlers, E C, Ciechanowska, Z E (1981) Acceptor bound exciton absorption and luminescence in germanium. Journal of Physics C: Solid State Physics, 14 (23). doi:10.1088/0022-3719/14/23/009
Canham, L, Davies, G, Lightowlers, E C (1980) The 1.045 eV vibronic band in silicon doped with lithium. Journal of Physics C: Solid State Physics, 13 (27). doi:10.1088/0022-3719/13/27/006
 
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