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Ridley, B K (1980) The photoionisation cross section of deep-level impurities in semiconductors. Journal of Physics C: Solid State Physics, 13 (10). 2015-2026 doi:10.1088/0022-3719/13/10/022

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Reference TypeJournal (article/letter/editorial)
TitleThe photoionisation cross section of deep-level impurities in semiconductors
JournalJournal of Physics C: Solid State Physics
AuthorsRidley, B KAuthor
Year1980 (April 10)Volume13
Issue10
PublisherIOP Publishing
DOIdoi:10.1088/0022-3719/13/10/022Search in ResearchGate
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Mindat Ref. ID8893029Long-form Identifiermindat:1:5:8893029:9
GUID0
Full ReferenceRidley, B K (1980) The photoionisation cross section of deep-level impurities in semiconductors. Journal of Physics C: Solid State Physics, 13 (10). 2015-2026 doi:10.1088/0022-3719/13/10/022
Plain TextRidley, B K (1980) The photoionisation cross section of deep-level impurities in semiconductors. Journal of Physics C: Solid State Physics, 13 (10). 2015-2026 doi:10.1088/0022-3719/13/10/022
In(1980, April) Journal of Physics C: Solid State Physics Vol. 13 (10) IOP Publishing

See Also

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Amato, M A, Ridley, B K (1980) A comparison of simple theoretical models for the photoionisation of impurities in semiconductors. Journal of Physics C: Solid State Physics, 13 (10). 2027-2040 doi:10.1088/0022-3719/13/10/023
Blow, K J, Inkson, J C (1980) Photoionisation of deep impurity levels in semiconductors. Journal of Physics C: Solid State Physics, 13 (3). 359-368 doi:10.1088/0022-3719/13/3/011
El-Ghanem, H M A, Ridley, B K (1980) Journal of Physics C: Solid State Physics, 13 (10). IOP Publishing. 2041-2054 doi:10.1088/0022-3719/13/10/024
Ridley, B K, Amato, M A (1981) A model for the interpretation of measurements of photoionisation and capture cross sections associated with deep-level impurities. Journal of Physics C: Solid State Physics, 14 (9). 1255-1269 doi:10.1088/0022-3719/14/9/012
Burt, M G (1980) Photoionisation of impurities with deep levels in gallium arsenide. Journal of Physics C: Solid State Physics, 13 (9). 1825-1834 doi:10.1088/0022-3719/13/9/027
Rodriguez, C O, Brand, S, Jaros, M (1980) Binding to deep impurities in semiconductors. Journal of Physics C: Solid State Physics, 13 (13). doi:10.1088/0022-3719/13/13/003
Arikan, M C, Hatch, C B, Ridley, B K (1980) Photoconductivity in n-type GaAs:O associated with the deep level at 0.4 eV. Journal of Physics C: Solid State Physics, 13 (4). 635-650 doi:10.1088/0022-3719/13/4/020
Noras, J M (1981) Comment on empirical photoionisation thresholds for deep-level impurities in semiconductors. Journal of Physics C: Solid State Physics, 14 (23). doi:10.1088/0022-3719/14/23/007
Riddoch, F A, Jaros, M (1980) Auger recombination cross section associated with deep traps in semiconductors. Journal of Physics C: Solid State Physics, 13 (33). 6181-6188 doi:10.1088/0022-3719/13/33/015
Inkson, J C (1980) Deep impurities in semiconductors. I. Evanescent states and complex band structure. Journal of Physics C: Solid State Physics, 13 (3). 369-381 doi:10.1088/0022-3719/13/3/012
Ledebo, L -A (1981) Hole photoionisation cross sections for deep level impurities in silicon. Journal of Physics C: Solid State Physics, 14 (22). 3279-3287 doi:10.1088/0022-3719/14/22/021
 
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