Robbins, D J, Landsberg, P T (1980) Impact ionisation and Auger recombination involving traps in semiconductors. Journal of Physics C: Solid State Physics, 13 (12). 2425-2439 doi:10.1088/0022-3719/13/12/021
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Impact ionisation and Auger recombination involving traps in semiconductors | ||
Journal | Journal of Physics C: Solid State Physics | ||
Authors | Robbins, D J | Author | |
Landsberg, P T | Author | ||
Year | 1980 (April 30) | Volume | 13 |
Issue | 12 | ||
Publisher | IOP Publishing | ||
DOI | doi:10.1088/0022-3719/13/12/021Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8893082 | Long-form Identifier | mindat:1:5:8893082:8 |
GUID | 0 | ||
Full Reference | Robbins, D J, Landsberg, P T (1980) Impact ionisation and Auger recombination involving traps in semiconductors. Journal of Physics C: Solid State Physics, 13 (12). 2425-2439 doi:10.1088/0022-3719/13/12/021 | ||
Plain Text | Robbins, D J, Landsberg, P T (1980) Impact ionisation and Auger recombination involving traps in semiconductors. Journal of Physics C: Solid State Physics, 13 (12). 2425-2439 doi:10.1088/0022-3719/13/12/021 | ||
In | (1980, April) Journal of Physics C: Solid State Physics Vol. 13 (12) IOP Publishing |
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