Reference Type | Journal (article/letter/editorial) |
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Title | Uniaxial stress measurements on the 0.97 eV line in irradiated silicon |
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Journal | Journal of Physics C: Solid State Physics |
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Authors | Foy, C P | Author |
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Carmo, M C do | Author |
Davies, G | Author |
Lightowlers, E C | Author |
Year | 1981 (January 10) | Volume | 14 |
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Issue | 1 |
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Publisher | IOP Publishing |
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DOI | doi:10.1088/0022-3719/14/1/002Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 8893816 | Long-form Identifier | mindat:1:5:8893816:7 |
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GUID | 0 |
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Full Reference | Foy, C P, Carmo, M C do, Davies, G, Lightowlers, E C (1981) Uniaxial stress measurements on the 0.97 eV line in irradiated silicon. Journal of Physics C: Solid State Physics, 14 (1). doi:10.1088/0022-3719/14/1/002 |
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Plain Text | Foy, C P, Carmo, M C do, Davies, G, Lightowlers, E C (1981) Uniaxial stress measurements on the 0.97 eV line in irradiated silicon. Journal of Physics C: Solid State Physics, 14 (1). doi:10.1088/0022-3719/14/1/002 |
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In | (1981, January) Journal of Physics C: Solid State Physics Vol. 14 (1) IOP Publishing |
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