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Kouimtzi, S D (1982) Evidence of a shallow radiation-induced defect level in n-type silicon. Journal of Physics C: Solid State Physics, 15 (10). 2169-2172 doi:10.1088/0022-3719/15/10/017

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Reference TypeJournal (article/letter/editorial)
TitleEvidence of a shallow radiation-induced defect level in n-type silicon
JournalJournal of Physics C: Solid State Physics
AuthorsKouimtzi, S DAuthor
Year1982 (April 10)Volume15
Issue10
PublisherIOP Publishing
DOIdoi:10.1088/0022-3719/15/10/017Search in ResearchGate
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Mindat Ref. ID8894570Long-form Identifiermindat:1:5:8894570:5
GUID0
Full ReferenceKouimtzi, S D (1982) Evidence of a shallow radiation-induced defect level in n-type silicon. Journal of Physics C: Solid State Physics, 15 (10). 2169-2172 doi:10.1088/0022-3719/15/10/017
Plain TextKouimtzi, S D (1982) Evidence of a shallow radiation-induced defect level in n-type silicon. Journal of Physics C: Solid State Physics, 15 (10). 2169-2172 doi:10.1088/0022-3719/15/10/017
In(1982, April) Journal of Physics C: Solid State Physics Vol. 15 (10) IOP Publishing

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Kouimtzi, S D, Banbury, P C (1982) Low-temperature radiation damage studies in phosphorus-doped silicon. Journal of Physics C: Solid State Physics, 15 (17). 3657-3662 doi:10.1088/0022-3719/15/17/005
Kouimtzi, S D, Banbury, P C (1982) Low-temperature radiation damage studies in boron-doped silicon. Journal of Physics C: Solid State Physics, 15 (6). 1137-1141 doi:10.1088/0022-3719/15/6/010
Belitz, D, Gotze, W (1982) Defect-induced tunnelling and the conductivity of strongly disordered systems. Journal of Physics C: Solid State Physics, 15 (5). 981-997 doi:10.1088/0022-3719/15/5/017
Clark, C D, Davey, S T (1984) Defect-induced one-phonon absorption in type Ia diamonds. Journal of Physics C: Solid State Physics, 17 (15). doi:10.1088/0022-3719/17/15/003
Leuthensser, E (1982) Diffusion and localisation in the d-dimensional Lorentz model. Journal of Physics C: Solid State Physics, 15 (10). doi:10.1088/0022-3719/15/10/007
Melvin, J S, Hendry, D C (1982) Phonon calculations for KCl ab initio. Journal of Physics C: Solid State Physics, 15 (10). 2093-2103 doi:10.1088/0022-3719/15/10/010
Prelovsek, P (1982) Tricritical point in the incommensurate systems. Journal of Physics C: Solid State Physics, 15 (10). doi:10.1088/0022-3719/15/10/002
Nazareno, H N, Amato, M A (1982) Deep impurities and critical points in semiconductors. Journal of Physics C: Solid State Physics, 15 (10). 2165-2168 doi:10.1088/0022-3719/15/10/016
Storbel, K, Geick, R (1982) Application of interionic potentials to perovskite-type layer structures. Journal of Physics C: Solid State Physics, 15 (10). 2105-2114 doi:10.1088/0022-3719/15/10/011
Havlin, S, Cowley, R A, Sompolinsky, H (1982) Anisotropic polarisation fluctuations in KD2PO4-type crystals. Journal of Physics C: Solid State Physics, 15 (29). 6057-6066 doi:10.1088/0022-3719/15/29/017
Kouimtzi, S D, Banbury, P C (1981) Low-temperature radiation damage studies in silicon by hopping conductance. Journal of Physics C: Solid State Physics, 14 (26). 3701-3709 doi:10.1088/0022-3719/14/26/008
 
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