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Long, A P, Myron, H W, Pepper, M (1984) Frequency-induced electron delocalisation and fractional quantisation in silicon inversion layers. Journal of Physics C: Solid State Physics, 17 (17). doi:10.1088/0022-3719/17/17/004

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Reference TypeJournal (article/letter/editorial)
TitleFrequency-induced electron delocalisation and fractional quantisation in silicon inversion layers
JournalJournal of Physics C: Solid State Physics
AuthorsLong, A PAuthor
Myron, H WAuthor
Pepper, MAuthor
Year1984 (June 20)Volume17
Issue17
PublisherIOP Publishing
DOIdoi:10.1088/0022-3719/17/17/004Search in ResearchGate
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Mindat Ref. ID8896485Long-form Identifiermindat:1:5:8896485:2
GUID0
Full ReferenceLong, A P, Myron, H W, Pepper, M (1984) Frequency-induced electron delocalisation and fractional quantisation in silicon inversion layers. Journal of Physics C: Solid State Physics, 17 (17). doi:10.1088/0022-3719/17/17/004
Plain TextLong, A P, Myron, H W, Pepper, M (1984) Frequency-induced electron delocalisation and fractional quantisation in silicon inversion layers. Journal of Physics C: Solid State Physics, 17 (17). doi:10.1088/0022-3719/17/17/004
In(1984, June) Journal of Physics C: Solid State Physics Vol. 17 (17) IOP Publishing

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McFadden, C, Long, A P, Myron, H W, Pepper, M, Andrews, D, Davies, G J (1984) Frequency-enhanced fractional quantisation in GaAs-GaAlAs heterojunctions. Journal of Physics C: Solid State Physics, 17 (17). doi:10.1088/0022-3719/17/17/005
Powell, T G, Newbury, R, Long, A P, McFadden, C, Myron, H W, Pepper, M (1985) Frequency-dependent magnetoconductance quantisation in 2D systems-a disorder effect. Journal of Physics C: Solid State Physics, 18 (17). doi:10.1088/0022-3719/18/17/004
Long, A P, Pepper, M (1984) Possible observation of an electronic phase transition in Sb doped Si. Journal of Physics C: Solid State Physics, 17 (17). doi:10.1088/0022-3719/17/17/003
Dato, P, Kohler, H (1984) Defect-induced bonding in Bi2Te3from thermoelastic properties. Journal of Physics C: Solid State Physics, 17 (21). 3711-3719 doi:10.1088/0022-3719/17/21/004
Long, A P, Pepper, M (1984) The magnetic field induced metal-insulator transition in n-type InP. Journal of Physics C: Solid State Physics, 17 (19). 3391-3400 doi:10.1088/0022-3719/17/19/013
Dean, C C, Pepper, M (1984) One-dimensional electron localisation and conduction of electron-electron scattering in narrow silicon MOSFETS. Journal of Physics C: Solid State Physics, 17 (31). 5663-5676 doi:10.1088/0022-3719/17/31/022
Nachev, I, Velchev, N (1984) Electron mobility of (100) silicon inversion layers-the Born approximation for electrical neutral scattering. Journal of Physics C: Solid State Physics, 17 (31). 5657-5662 doi:10.1088/0022-3719/17/31/021
Robertson, J (1984) Journal of Physics C: Solid State Physics, 17 (13). IOP Publishing. doi:10.1088/0022-3719/17/13/004
Tao, R (1984) Ground state energy of the fractional quantised Hall system. Journal of Physics C: Solid State Physics, 17 (17). doi:10.1088/0022-3719/17/17/002
John, S, Stephen, M J (1984) Electronic density of states in a long-range correlated potential. Journal of Physics C: Solid State Physics, 17 (22). doi:10.1088/0022-3719/17/22/004
Oji, H (1984) Thermomagnetic effects in two-dimensional electron systems. Journal of Physics C: Solid State Physics, 17 (17). 3059-3066 doi:10.1088/0022-3719/17/17/014
 
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