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Davies, G, Lightowlers, E C, Woolley, R, Newman, R C, Oates, A S (1984) Carbon in radiation damage centres in Czochralski silicon. Journal of Physics C: Solid State Physics, 17 (19). doi:10.1088/0022-3719/17/19/005

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Reference TypeJournal (article/letter/editorial)
TitleCarbon in radiation damage centres in Czochralski silicon
JournalJournal of Physics C: Solid State Physics
AuthorsDavies, GAuthor
Lightowlers, E CAuthor
Woolley, RAuthor
Newman, R CAuthor
Oates, A SAuthor
Year1984 (July 10)Volume17
Issue19
PublisherIOP Publishing
DOIdoi:10.1088/0022-3719/17/19/005Search in ResearchGate
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Mindat Ref. ID8896529Long-form Identifiermindat:1:5:8896529:5
GUID0
Full ReferenceDavies, G, Lightowlers, E C, Woolley, R, Newman, R C, Oates, A S (1984) Carbon in radiation damage centres in Czochralski silicon. Journal of Physics C: Solid State Physics, 17 (19). doi:10.1088/0022-3719/17/19/005
Plain TextDavies, G, Lightowlers, E C, Woolley, R, Newman, R C, Oates, A S (1984) Carbon in radiation damage centres in Czochralski silicon. Journal of Physics C: Solid State Physics, 17 (19). doi:10.1088/0022-3719/17/19/005
In(1984, July) Journal of Physics C: Solid State Physics Vol. 17 (19) IOP Publishing

See Also

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Davies, G, Oates, A S, Newman, R C, Woolley, R, Lightowlers, E C, Binns, M J, Wilkes, J G (1986) Carbon-related radiation damage centres in Czochralski silicon. Journal of Physics C: Solid State Physics, 19 (6). 841-855 doi:10.1088/0022-3719/19/6/006
Oates, A. S., Newman, R. C., Woolley, R., Davies, G., Lightowlers, E. C., Binns, M. J., Wilkes, J. G. (1985) Determination of low levels of carbon in Czochralski silicon. Applied Physics Letters, 47 (7). 705-707 doi:10.1063/1.96065
Oates, A S, Binns, M J, Newman, R C, Tucker, R C, Wilkes, J G, Wilkinson, A (1984) The mechanism of radiation-enhanced diffusion of oxygen in silicon at room temperature. Journal of Physics C: Solid State Physics, 17 (32). 5695-5705 doi:10.1088/0022-3719/17/32/006
Clifton, P, Davies, G, Lightowlers, E C (1984) The symmetry of the 875 meV Ga-related luminescence band in irradiated silicon. Journal of Physics C: Solid State Physics, 17 (33). doi:10.1088/0022-3719/17/33/001
Gledhill, G A, Newman, R C, Woodhead, J (1984) Direct evidence for the existence of BAsimpurity antisite centres in GaAs. Journal of Physics C: Solid State Physics, 17 (11). doi:10.1088/0022-3719/17/11/001
Kouimtzi, S D, Banbury, P C (1982) Low-temperature radiation damage studies in phosphorus-doped silicon. Journal of Physics C: Solid State Physics, 15 (17). 3657-3662 doi:10.1088/0022-3719/15/17/005
Davies, G, Canham, L, Lightowlers, E C (1984) Magnetic and uniaxial stress perturbations of optical transitions at a four Li atom complex in Si. Journal of Physics C: Solid State Physics, 17 (6). doi:10.1088/0022-3719/17/6/003
Newman, R C, Oates, A S, Livingston, F M (1983) Self-interstitials and thermal donor formation in silicon: new measurements and a model for the defects. Journal of Physics C: Solid State Physics, 16 (19). doi:10.1088/0022-3719/16/19/002
Bean, A R, Morrison, S R, Newman, R C, Smith, R S (1972) Electron irradiation damage in silicon containing high concentrations of boron. Journal of Physics C: Solid State Physics, 5 (4). 379-400 doi:10.1088/0022-3719/5/4/005
Bowman, R C, Craft, B D (1984) Rotating-frame relaxation time study of hydrogen diffusion in ZrHx. Journal of Physics C: Solid State Physics, 17 (19). doi:10.1088/0022-3719/17/19/001
Maguire, J, Newman, R C, Beall, R B (1986) Site switching of silicon in neutron-irradiated and annealed gallium arsenide by vacancy migration. Journal of Physics C: Solid State Physics, 19 (12). 1897-1907 doi:10.1088/0022-3719/19/12/005
 
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