Reference Type | Journal (article/letter/editorial) |
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Title | Raman effect studies of isoelectronic substitution in Si-Ge-S glasses |
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Journal | Journal of Physics C: Solid State Physics |
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Authors | Tenhover, M | Author |
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Hazle, M A | Author |
Grasselli, R K | Author |
Year | 1985 (April 10) | Volume | 18 |
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Issue | 10 |
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Publisher | IOP Publishing |
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DOI | doi:10.1088/0022-3719/18/10/008Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 8897146 | Long-form Identifier | mindat:1:5:8897146:3 |
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GUID | 0 |
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Full Reference | Tenhover, M, Hazle, M A, Grasselli, R K (1985) Raman effect studies of isoelectronic substitution in Si-Ge-S glasses. Journal of Physics C: Solid State Physics, 18 (10). 2025-2031 doi:10.1088/0022-3719/18/10/008 |
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Plain Text | Tenhover, M, Hazle, M A, Grasselli, R K (1985) Raman effect studies of isoelectronic substitution in Si-Ge-S glasses. Journal of Physics C: Solid State Physics, 18 (10). 2025-2031 doi:10.1088/0022-3719/18/10/008 |
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In | (1985, April) Journal of Physics C: Solid State Physics Vol. 18 (10) IOP Publishing |
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