Reference Type | Journal (article/letter/editorial) |
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Title | Electronic structure of Ge in SiO2 |
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Journal | Journal of Physics C: Solid State Physics |
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Authors | Hagon, J P | Author |
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Jaros, M | Author |
Stoneham, A M | Author |
Year | 1985 (September 10) | Volume | 18 |
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Issue | 25 |
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Publisher | IOP Publishing |
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DOI | doi:10.1088/0022-3719/18/25/014Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 8897517 | Long-form Identifier | mindat:1:5:8897517:7 |
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GUID | 0 |
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Full Reference | Hagon, J P, Jaros, M, Stoneham, A M (1985) Electronic structure of Ge in SiO2. Journal of Physics C: Solid State Physics, 18 (25). 4957-4962 doi:10.1088/0022-3719/18/25/014 |
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Plain Text | Hagon, J P, Jaros, M, Stoneham, A M (1985) Electronic structure of Ge in SiO2. Journal of Physics C: Solid State Physics, 18 (25). 4957-4962 doi:10.1088/0022-3719/18/25/014 |
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In | (1985, September) Journal of Physics C: Solid State Physics Vol. 18 (25) IOP Publishing |
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