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Kane, M J, Apsley, N, Anderson, D A, Taylor, L L, Kerr, T (1985) Parallel conduction in GaAs/AlxGa1-xAs modulation doped heterojunctions. Journal of Physics C: Solid State Physics, 18 (29). 5629-5636 doi:10.1088/0022-3719/18/29/013

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Reference TypeJournal (article/letter/editorial)
TitleParallel conduction in GaAs/AlxGa1-xAs modulation doped heterojunctions
JournalJournal of Physics C: Solid State Physics
AuthorsKane, M JAuthor
Apsley, NAuthor
Anderson, D AAuthor
Taylor, L LAuthor
Kerr, TAuthor
Year1985 (October 20)Volume18
Issue29
PublisherIOP Publishing
DOIdoi:10.1088/0022-3719/18/29/013Search in ResearchGate
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Mindat Ref. ID8897613Long-form Identifiermindat:1:5:8897613:0
GUID0
Full ReferenceKane, M J, Apsley, N, Anderson, D A, Taylor, L L, Kerr, T (1985) Parallel conduction in GaAs/AlxGa1-xAs modulation doped heterojunctions. Journal of Physics C: Solid State Physics, 18 (29). 5629-5636 doi:10.1088/0022-3719/18/29/013
Plain TextKane, M J, Apsley, N, Anderson, D A, Taylor, L L, Kerr, T (1985) Parallel conduction in GaAs/AlxGa1-xAs modulation doped heterojunctions. Journal of Physics C: Solid State Physics, 18 (29). 5629-5636 doi:10.1088/0022-3719/18/29/013
In(1985, October) Journal of Physics C: Solid State Physics Vol. 18 (29) IOP Publishing

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Hurkx, G A M, Haeringen, W van (1985) Self-consistent calculations on GaAs-AlxGa1-xAs heterojunctions. Journal of Physics C: Solid State Physics, 18 (29). 5617-5627 doi:10.1088/0022-3719/18/29/012
Schubert, E F, Knecht, J, Ploog, K (1985) Transient and persistent photoconductivity in n-AlxGa1-xAs and selectively doped n-AlxGa1-xAs/GaAs heterostructures. Journal of Physics C: Solid State Physics, 18 (9). doi:10.1088/0022-3719/18/9/007
Welsh, H K (1985) Dielectric absorption and low-temperature ionic conduction in calcium fluoride doped with trivalent rare earths. Journal of Physics C: Solid State Physics, 18 (29). 5641-5649 doi:10.1088/0022-3719/18/29/015
Finlayson, D M, Mehaffey, G (1985) Inelastic scattering times in indium phosphide. Journal of Physics C: Solid State Physics, 18 (29). doi:10.1088/0022-3719/18/29/003
Pawlikowski, J M (1985) Optical band gap of Cd3P2-Zn3P2semiconductor solid solutions. Journal of Physics C: Solid State Physics, 18 (29). 5605-5616 doi:10.1088/0022-3719/18/29/011
Lakshmi, T V, Shrivastava, K N (1985) Surface recombination in spin-polarised atomic hydrogen. Journal of Physics C: Solid State Physics, 18 (29). 5659-5665 doi:10.1088/0022-3719/18/29/017
Fossum, J O (1985) A phenomenological analysis of ultrasound near phase transitions. Journal of Physics C: Solid State Physics, 18 (29). 5531-5548 doi:10.1088/0022-3719/18/29/006
Guimaraes, P S S, Taylor, D C, Snell, B R, Eaves, L, Singer, K E, Hill, G, Pate, M A, Toombs, G A, Sheard, F W (1985) Tunneling and magneto-tunnelling effects in n+GaAs/(AlGa)As/n-GaAs/n+GaAs devices. Journal of Physics C: Solid State Physics, 18 (20). doi:10.1088/0022-3719/18/20/007
Slotte, P A (1985) Dilution-induced phase transitions in an exactly solvable model. Journal of Physics C: Solid State Physics, 18 (29). doi:10.1088/0022-3719/18/29/004
Selmi, A, Mauger, A, Heritier, M (1985) Metal-insulator transition in a Mott extrinsic magnetic semiconductor: n-type HgCr2Se4. Journal of Physics C: Solid State Physics, 18 (29). 5599-5604 doi:10.1088/0022-3719/18/29/010
Ducasse, L, Abderrabba, M, Gallois, B (1985) Temperature dependence of the Fermi surface topography in the (TOTSF)2X and (TMTTF)2X families. Journal of Physics C: Solid State Physics, 18 (29). doi:10.1088/0022-3719/18/29/002
 
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