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CAI, JUN, WANG, JIAN-SHENG (2002) ADSORPTION AND DIFFUSION OF Si ON THE Si(001): AN EMPIRICAL POTENTIAL CALCULATION. International Journal of Modern Physics B, 16 (4). 621-629 doi:10.1142/s0217979202010051

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Reference TypeJournal (article/letter/editorial)
TitleADSORPTION AND DIFFUSION OF Si ON THE Si(001): AN EMPIRICAL POTENTIAL CALCULATION
JournalInternational Journal of Modern Physics B
AuthorsCAI, JUNAuthor
WANG, JIAN-SHENGAuthor
Year2002 (February 10)Volume16
Issue4
PublisherWorld Scientific Pub Co Pte Lt
DOIdoi:10.1142/s0217979202010051Search in ResearchGate
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Mindat Ref. ID8904733Long-form Identifiermindat:1:5:8904733:8
GUID0
Full ReferenceCAI, JUN, WANG, JIAN-SHENG (2002) ADSORPTION AND DIFFUSION OF Si ON THE Si(001): AN EMPIRICAL POTENTIAL CALCULATION. International Journal of Modern Physics B, 16 (4). 621-629 doi:10.1142/s0217979202010051
Plain TextCAI, JUN, WANG, JIAN-SHENG (2002) ADSORPTION AND DIFFUSION OF Si ON THE Si(001): AN EMPIRICAL POTENTIAL CALCULATION. International Journal of Modern Physics B, 16 (4). 621-629 doi:10.1142/s0217979202010051
In(2002, February) International Journal of Modern Physics B Vol. 16 (4) World Scientific Pub Co Pte Lt

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Cai, Jun, Wang, Jian-Sheng (2001) Reconstruction of Si(001) and adsorption of Si adatoms and ad-dimers on the surface: Many-body potential calculations. Physical Review B, 64 (3) doi:10.1103/physrevb.64.035402
WANG, CHANGQING, JIA, YU, WANG, XUEQING, LI, XINJIAN, HU, XING, WANG, SONGYOU (2008) MOLECULAR DYNAMICS SIMULATIONS OF SINGLE Si ADATOM DIFFUSION ON THE Si(001) SURFACE AND ACROSS SINGLE-LAYER Si(001) STEPS. Modern Physics Letters B, 22. 117-125 doi:10.1142/s0217984908014602
CHOI, D. S., JUNG, J. W., YOON, M. S., JUNG, K. H., WHANG, C. N. (2002) RELAXATION OF Si DIMER ON THE Si(001) SURFACE INDUCED BY Pt ADSORPTION. Modern Physics Letters B, 16. 171-177 doi:10.1142/s0217984902003658
WANG, QI-YUAN, TAN, LI-WEN, WANG, JUN, YU, YUAN-HUAN, LIN, LAN-YING (2002) HETEROEPITAXIAL GROWTH OF NOVEL SOI MATERIAL Si/γ-Al2O3/Si. International Journal of Modern Physics B, 16 (28). 4271-4274 doi:10.1142/s0217979202015248
LIANG, M. H., XIE, X., LI, S. (2002) COMPUTER SIMULATION OF EPITAXIAL GROWTH OF SILICON ON Si (001) SURFACE. International Journal of Modern Physics B, 16 (1). 227-232 doi:10.1142/s0217979202009688
Cai, Jun, Wang, Jian-Sheng (2002) Friction between Si tip and (001)-2×1 surface: A molecular dynamics simulation. Computer Physics Communications, 147. 145-148 doi:10.1016/s0010-4655(02)00282-5
DING, TAO, SONG, JUNQIANG, CAI, QUN (2007) RARE-EARTH METAL SILICIDE NANOSTRUCTURES ON Si(001) SURFACE. International Journal of Modern Physics B, 21 (11). 1799-1815 doi:10.1142/s0217979207037119
YE, ZHIZHEN, GU, XING, HUANG, JINGYUN, WANG, YU, SHAO, QINGHUI, ZHAO, BINGHUI (2002) AN ULTRAVIOLET PHOTODETECTOR BASED ON GaN/Si. International Journal of Modern Physics B, 16 (28). 4310-4313 doi:10.1142/s0217979202015327
KATIRCIOĞLU, ŞENAY (2002) DECOMPOSITION OF CH4 ON SA TYPE STEPPED Si(100) SURFACE. International Journal of Modern Physics B, 16 (16). 2191-2200 doi:10.1142/s0217979202011238
Cai, Jun, Wang, Jian-Sheng (2001) Reconstruction of Si(001): A Comparison Study of Many Body Potential Calculations. physica status solidi (b), 223 (3). 773-778 doi:10.1002/1521-3951(200102)223:3<773::aid-pssb773>3.0.co;2-8
DENG, X., WANG, W., HAN, S., POVOLNY, H., DU, W., LIAO, X., XIANG, X. (2002) IMPACT OF WIDE BANDGAP P-TYPE NC-SI ON THE PERFORMANCE OF A-SI SOLAR CELLS. International Journal of Modern Physics B, 16 (1). 57-63 doi:10.1142/s0217979202009457
 
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