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HASSAN, Z., IBRAHIM, K., KORDESCH, M. E., HALVERSON, W., COLTER, P. C. (2002) PROPERTIES OF AMORPHOUS GAN GROWN ON SILICON. International Journal of Modern Physics B, 16 (6). 1086-1090 doi:10.1142/s0217979202010907

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Reference TypeJournal (article/letter/editorial)
TitlePROPERTIES OF AMORPHOUS GAN GROWN ON SILICON
JournalInternational Journal of Modern Physics B
AuthorsHASSAN, Z.Author
IBRAHIM, K.Author
KORDESCH, M. E.Author
HALVERSON, W.Author
COLTER, P. C.Author
Year2002 (March 20)Volume16
Issue6
PublisherWorld Scientific Pub Co Pte Lt
DOIdoi:10.1142/s0217979202010907Search in ResearchGate
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Mindat Ref. ID8904789Long-form Identifiermindat:1:5:8904789:7
GUID0
Full ReferenceHASSAN, Z., IBRAHIM, K., KORDESCH, M. E., HALVERSON, W., COLTER, P. C. (2002) PROPERTIES OF AMORPHOUS GAN GROWN ON SILICON. International Journal of Modern Physics B, 16 (6). 1086-1090 doi:10.1142/s0217979202010907
Plain TextHASSAN, Z., IBRAHIM, K., KORDESCH, M. E., HALVERSON, W., COLTER, P. C. (2002) PROPERTIES OF AMORPHOUS GAN GROWN ON SILICON. International Journal of Modern Physics B, 16 (6). 1086-1090 doi:10.1142/s0217979202010907
In(2002, March) International Journal of Modern Physics B Vol. 16 (6) World Scientific Pub Co Pte Lt

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