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Xian-Qi, Dai, Jian-Hua, Zhao, Yong-Can, Sun, Shu-Yi, Wei, Guo-Hong, Wei (2010) First-Principles Calculations of Atomic and Electronic Properties of Tl and In on Si(111). Communications in Theoretical Physics, 54 (3). 545-550 doi:10.1088/0253-6102/54/3/32

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Reference TypeJournal (article/letter/editorial)
TitleFirst-Principles Calculations of Atomic and Electronic Properties of Tl and In on Si(111)
JournalCommunications in Theoretical Physics
AuthorsXian-Qi, DaiAuthor
Jian-Hua, ZhaoAuthor
Yong-Can, SunAuthor
Shu-Yi, WeiAuthor
Guo-Hong, WeiAuthor
Year2010 (September)Volume54
Issue3
PublisherIOP Publishing
DOIdoi:10.1088/0253-6102/54/3/32Search in ResearchGate
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Mindat Ref. ID8976486Long-form Identifiermindat:1:5:8976486:0
GUID0
Full ReferenceXian-Qi, Dai, Jian-Hua, Zhao, Yong-Can, Sun, Shu-Yi, Wei, Guo-Hong, Wei (2010) First-Principles Calculations of Atomic and Electronic Properties of Tl and In on Si(111). Communications in Theoretical Physics, 54 (3). 545-550 doi:10.1088/0253-6102/54/3/32
Plain TextXian-Qi, Dai, Jian-Hua, Zhao, Yong-Can, Sun, Shu-Yi, Wei, Guo-Hong, Wei (2010) First-Principles Calculations of Atomic and Electronic Properties of Tl and In on Si(111). Communications in Theoretical Physics, 54 (3). 545-550 doi:10.1088/0253-6102/54/3/32
In(2010, September) Communications in Theoretical Physics Vol. 54 (3) IOP Publishing

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