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Schättiger, F., Bauer, D., Demsar, J., Dekorsy, T., Kleinbauer, J., Sutter, D. H., Puustinen, J., Guina, M. (2012) Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers. Applied Physics B, 106 (3). 605-612 doi:10.1007/s00340-011-4697-7

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Reference TypeJournal (article/letter/editorial)
TitleCharacterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers
JournalApplied Physics B
AuthorsSchättiger, F.Author
Bauer, D.Author
Demsar, J.Author
Dekorsy, T.Author
Kleinbauer, J.Author
Sutter, D. H.Author
Puustinen, J.Author
Guina, M.Author
Year2012 (March)Volume106
Issue3
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s00340-011-4697-7Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9022015Long-form Identifiermindat:1:5:9022015:9
GUID0
Full ReferenceSchättiger, F., Bauer, D., Demsar, J., Dekorsy, T., Kleinbauer, J., Sutter, D. H., Puustinen, J., Guina, M. (2012) Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers. Applied Physics B, 106 (3). 605-612 doi:10.1007/s00340-011-4697-7
Plain TextSchättiger, F., Bauer, D., Demsar, J., Dekorsy, T., Kleinbauer, J., Sutter, D. H., Puustinen, J., Guina, M. (2012) Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers. Applied Physics B, 106 (3). 605-612 doi:10.1007/s00340-011-4697-7
In(2012, March) Applied Physics B Vol. 106 (3) Springer Science and Business Media LLC


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